IRF840 N-Channel Power MOSFET TO-220 Package

IRF840 N-Channel Power MOSFET for High Voltage Switching

IRF840 N-Channel MOSFET for efficient power conversion with 500V rating, 8A continuous current, and low gate charge.

The IRF840 N-Channel Power MOSFET is designed for high voltage switching and efficient power conversion in various applications. With a drain-source voltage rating of 500V and a continuous drain current of 8A, it operates effectively in switch-mode power supplies, inverters, and motor control circuits. Its fast switching performance and low gate charge make it a reliable choice for high-frequency operations.

In the TO-220 package, the IRF840 ensures effective thermal dissipation, enhancing its performance in demanding environments. This MOSFET is engineered for applications requiring ruggedness and reliability, such as lighting ballasts and energy-efficient systems. Choose the IRF840 N-Channel Power MOSFET for your electronic projects and experience dependable power management.

This component is ideal for Indian customers looking for robust solutions in high-voltage applications. As a trusted supplier, DNA offers a wide range of MOSFETs, including the IRF840, ensuring fast dispatch across India. Discover how this MOSFET can enhance your designs today.

Explore the reliability of the IRF840 N-Channel Power MOSFET at DNA. As a trusted supplier of MOSFET & IGBT products, we invite you to see other options in this category. Check other MOSFET & IGBT that we have in stock.

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Features of IRF840 N-Channel Power MOSFET

• N-Channel enhancement mode
• Drain-Source Voltage rating of 500 V
• Continuous Drain Current of 8 A
• Low gate charge and fast switching
• RDS(on) as low as 0.85 Ω (max)
• TO-220 package for efficient heat dissipation

Specifications of IRF840 N-Channel Power MOSFET

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (VDSS): 500 V
• Gate Threshold Voltage (VGS(th)): 2.0 to 4.0 V
• Continuous Drain Current (ID): 8 A (at 25°C)
• Pulsed Drain Current (IDM): 32 A
• RDS(on): 0.85 Ω (max)
• Total Gate Charge (Qg): 67 nC (typ)
• Power Dissipation (PD): 125 W
• Package: TO-220

Applications of IRF840 N-Channel Power MOSFET

• Switch-mode power supplies (SMPS)
• DC-DC converters and inverters
• Motor drivers and servo control circuits
• Lighting ballasts
• High-frequency and high-voltage switching circuits

Related Links for IRF840 N-Channel Power MOSFET for High Voltage Switching

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Package Includes

• 1 X IRF840 N-Channel Power MOSFET (TO-220)