IRF840 N-Channel Power MOSFET TO-220 Package

IRF840: 500V N-Channel MOSFET for High Voltage Switching and Power Conversion

The IRF840 is a rugged N-Channel Power MOSFET designed for high-speed switching and efficient power conversion in high-voltage applications. With a drain-source voltage rating of 500 V and continuous drain current of 8 A, it is ideal for use in switch-mode power supplies, inverters, motor control circuits, and lighting ballasts. The IRF840 offers fast switching performance and low gate charge, and comes in a standard TO-220 package for effective thermal dissipation.

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Features of IRF840 MOSFET

• N-Channel enhancement mode power MOSFET
• Drain-Source Voltage rating of 500 V
• Continuous Drain Current of 8 A (at 25°C)
• Low gate charge and fast switching
• R_DS(on) as low as 0.85 Ω (max)
• High-speed switching and avalanche energy rated
• TO-220 package for efficient heat dissipation

Specifications of IRF840 MOSFET

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 500 V
• Gate Threshold Voltage (V_GS(th)): 2.0 to 4.0 V
• Continuous Drain Current (I_D): 8 A (at 25°C)
• Pulsed Drain Current (I_DM): 32 A
• R_DS(on): 0.85 Ω (max)
• Total Gate Charge (Q_g): 67 nC (typ)
• Power Dissipation (P_D): 125 W
• Package: TO-220

Applications of IRF840 MOSFET

• Switch-mode power supplies (SMPS)
• DC-DC converters and inverters
• Motor drivers and servo control circuits
• Lighting ballasts and energy-efficient systems
• High-frequency and high-voltage switching circuits

Related Links

• IRF840 Datasheet (PDF)
• Browse More Transistors & Diodes

Package Include

• 1 x IRF840 N-Channel Power MOSFET (TO-220)