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MJE3055 Power Transistor
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MJE3055 Power Transistor
MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220
It is intended for power switching circuits and general-purpose
amplifiers. The complementary PNP type is MJE2955T.
Features of MJE3055 Transistor
VCEO Collector-Emitter Voltage (IB=0): 60 V
VCBO Collector-Base Voltage (IE=0): 70 V
VEBO Emitter-Base Voltage (IC=0): 5 V
IC Collector Current: 10 A
IB Base Current: 6 A
Ptot Total Power Dissipation at Tcase: ≤ 25 oC 75 W
Tstg Storage Temperature: -55 to 150 oC
Tj Max. Operating Junction Temperature: 150 oC
Rthj-case Thermal Resistance Junction-case: Max 1.66 oC/W
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