H20R1203 IGBT Power Transistor
- Stock: 15
- SKU: 8191 | DAH781
-
Rs. 130.27 (inc GST)
Rs.110.40 + GSTQty :
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Delivery: 2–8 days across India. No MOQ required.
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H20R1203 IGBT Power Transistor
H20R1203 IGBT Power Transistor with low conduction losses, 1200V max voltage, and 20A current capacity.
The H20R1203 IGBT Power Transistor is a high-performance component ideal for power switching applications. It combines the benefits of MOSFETs and bipolar transistors, ensuring low conduction losses and rapid switching. With a maximum collector-emitter voltage of 1200V and a continuous collector current of 20A, this transistor is suitable for various applications in the Indian market. The H20R1203 IGBT Power Transistor also features a monolithic body diode for soft commutation, enhancing overall efficiency.
This IGBT is perfect for inductive cooking, inverterized microwave ovens, and resonant converters. Its low electromagnetic interference (EMI) minimizes noise, making it an excellent choice for sensitive electronic circuits. The H20R1203 IGBT Power Transistor is RoHS compliant, ensuring it is environmentally friendly. Choose this component for your next project and experience improved performance in your power electronics.
For those in Nashik, visit our local shop at New CBS or order online for delivery across India. Explore the benefits of the H20R1203 IGBT Power Transistor and enhance your applications today.
Explore the range of MOSFET & IGBT from DNA. The H20R1203 IGBT Power Transistor delivers efficiency and reliability for your power needs. Check other MOSFET & IGBT that we have in stock.
At DNA, we cater to the needs of Indian electronics buyers. If you can’t find specific parts, let us know. We can import items and support both retail and bulk purchases. Consider our range of inductors, DC to DC converter ICs, power supplies, IGBTs, digital ICs, and transistors. Contact Us.
Features of H20R1203 IGBT Power Transistor
- Integrated Monolithic Body Diode
- Low Voltage for Reduced Losses
- Low Electromagnetic Interference (EMI)
- RoHS Compliant
Specification of H20R1203 IGBT Power Transistor
- Maximum Voltage (Collector-Emitter): 1200V
- Maximum Current (Continuous Collector): 20A
- Maximum Power Dissipation: 155W
- Package Type: TO-247
Applications of H20R1203 IGBT Power Transistor
- Inductive Cooking
- Inverterized Microwave Ovens
- Resonant Converters
- Soft Switching Applications
Related Links for H20R1203 IGBT Power Transistor
Package Includes
- 1 X H20R1203 IGBT Power Transistor
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