H20R1203 IGBT Power Transistor
- Stock: 18
- SKU: 8191 | DAH781
-
Rs. 130.27 (inc GST)
Rs.110.40 + GSTQty :
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H20R1203 IGBT Power Transistor
H20R1203 IGBT Power Transistor
The H20R1203 is a high-performance Insulated-Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. Combining the advantages of MOSFETs and bipolar transistors, it offers low conduction losses and fast switching capabilities.
DNA solutions, Nashik has various types of IGBT's. Check out our complete collection of IGBT's.
- Integrated Monolithic Body Diode: Designed for soft commutation, providing a low forward voltage drop
- Low Voltage : Reduces conduction losses, enhancing efficiency
- Low Electromagnetic Interference (EMI): Minimizes noise in electronic circuits
- RoHS Compliant: Environmentally friendly with Pb-free lead plating
Specifications of H20R1203 IGBT Power Transistor
- Maximum Voltage (Collector-Emitter): 1200V
- Maximum Current (Continuous Collector): 20A
- Maximum Power Dissipation: 155W
- Package Type: TO-247
Applications of H20R1203 IGBT Power Transistor
- Inductive Cooking
- Inverterized Microwave Ovens
- Resonant Converters
- Soft Switching Applications
Package Includes
1 x H20R1203 IGBT Power Transistor
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