IRF840 N-Channel Power MOSFET TO-220 Package
- Stock: 46
- SKU: 349 | DAA161
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Rs. 33.04 (inc GST)
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IRF840 N-Channel Power MOSFET for High Voltage Switching
IRF840 N-Channel MOSFET for efficient power conversion with 500V rating, 8A continuous current, and low gate charge.
The IRF840 N-Channel Power MOSFET is designed for high voltage switching and efficient power conversion in various applications. With a drain-source voltage rating of 500V and a continuous drain current of 8A, it operates effectively in switch-mode power supplies, inverters, and motor control circuits. Its fast switching performance and low gate charge make it a reliable choice for high-frequency operations.
In the TO-220 package, the IRF840 ensures effective thermal dissipation, enhancing its performance in demanding environments. This MOSFET is engineered for applications requiring ruggedness and reliability, such as lighting ballasts and energy-efficient systems. Choose the IRF840 N-Channel Power MOSFET for your electronic projects and experience dependable power management.
This component is ideal for Indian customers looking for robust solutions in high-voltage applications. As a trusted supplier, DNA offers a wide range of MOSFETs, including the IRF840, ensuring fast dispatch across India. Discover how this MOSFET can enhance your designs today.
Explore the reliability of the IRF840 N-Channel Power MOSFET at DNA. As a trusted supplier of MOSFET & IGBT products, we invite you to see other options in this category. Check other MOSFET & IGBT that we have in stock.
If you're searching for specific electronic components, DNA can assist you. We can import parts that are not currently available and support both retail and bulk orders. Explore related items such as Diodes, Inductors, DC to DC Converter ICs, Capacitors, and Development Modules. Contact Us.
Features of IRF840 N-Channel Power MOSFET
- N-Channel enhancement mode
- Drain-Source Voltage rating of 500 V
- Continuous Drain Current of 8 A
- Low gate charge and fast switching
- RDS(on) as low as 0.85 Ω (max)
- TO-220 package for efficient heat dissipation
Specifications of IRF840 N-Channel Power MOSFET
- Transistor Type: N-Channel MOSFET
- Drain-Source Voltage (VDSS): 500 V
- Gate Threshold Voltage (VGS(th)): 2.0 to 4.0 V
- Continuous Drain Current (ID): 8 A (at 25°C)
- Pulsed Drain Current (IDM): 32 A
- RDS(on): 0.85 Ω (max)
- Total Gate Charge (Qg): 67 nC (typ)
- Power Dissipation (PD): 125 W
- Package: TO-220
Applications of IRF840 N-Channel Power MOSFET
- Switch-mode power supplies (SMPS)
- DC-DC converters and inverters
- Motor drivers and servo control circuits
- Lighting ballasts
- High-frequency and high-voltage switching circuits
Related Links for IRF840 N-Channel Power MOSFET for High Voltage Switching
Package Includes
- 1 X IRF840 N-Channel Power MOSFET (TO-220)
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