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FDP51N25 N CHANNEL MOSFET TO220 3
- Stock: Out Of Stock
- SKU: 7953 | DAH685
-
Rs. 196.55 (inc GST)
Rs.166.57 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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Import Service: We import a wide range of electronic components on request.
onsemi FDP51N25 N-Channel MOSFET TO220-3
FDP51N25 N-Channel MOSFET for high current applications with 51A capacity, low gate charge, and enhanced switching performance.
The onsemi FDP51N25 N-Channel MOSFET TO220-3 is designed for high voltage applications. It features a continuous drain current of 51A, making it ideal for power factor correction and flat panel display power supplies. This MOSFET excels with a low gate charge of 55 nC, ensuring efficient switching and high performance. The FDP51N25 N-Channel MOSFET also possesses a low reverse transfer capacitance of 63 pF, which enhances its switching capabilities.
With a drain-source voltage of 250V and power dissipation of 320W at 25°C, the FDP51N25 N-Channel MOSFET TO220-3 is suitable for various applications such as ATX power supplies and electronic lamp ballasts. Its robust thermal resistance ensures reliable performance even in demanding conditions. Choose the FDP51N25 N-Channel MOSFET for reliable, high-efficiency solutions in your electronic designs.
Explore the full potential of the onsemi FDP51N25 N-Channel MOSFET TO220-3 for your projects. Its advanced features make it a trustworthy choice for engineers looking for quality and performance in MOSFETs.
Discover the quality of MOSFET & IGBT solutions from DNA. Explore products from onsemi and enhance your electronic projects. Check other MOSFET & IGBT that we have in stock.
At DNA, we cater to all your electronic needs. If you can't find specific components, we can help. We can import parts if needed. Explore related items like Analog IC, Connectors, Transistors, SMPS, and Hongfa Relay. Contact Us.
Features of onsemi FDP51N25 N-Channel MOSFET TO220-3
- High Current Capability: 51 A
- Low Gate Charge: 55 nC
- Low Reverse Transfer Capacitance: 63 pF
Specification of onsemi FDP51N25 N-Channel MOSFET TO220-3
- Drain-Source Voltage: 250 V
- Gate-Source Voltage: ±30 V
- Power Dissipation: 320 W
- Thermal Resistance Junction-to-Case: 0.39°C/W
- Operating Junction Temperature: -55°C to +150°C
- Package: TO-220-3
Applications of onsemi FDP51N25 N-Channel MOSFET TO220-3
- Power Factor Correction
- Flat Panel Display Power Supplies
- ATX Power Supplies
- Electronic Lamp Ballasts
Related Links for onsemi FDP51N25 N-Channel MOSFET TO220-3
Package Includes
- 1 X FDP51N25 N CHANNEL MOSFET TO220 3
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