onsemi FDP51N25 N-Channel MOSFET TO220-3

FDP51N25 N-Channel MOSFET for high current applications with 51A capacity, low gate charge, and enhanced switching performance.

The onsemi FDP51N25 N-Channel MOSFET TO220-3 is designed for high voltage applications. It features a continuous drain current of 51A, making it ideal for power factor correction and flat panel display power supplies. This MOSFET excels with a low gate charge of 55 nC, ensuring efficient switching and high performance. The FDP51N25 N-Channel MOSFET also possesses a low reverse transfer capacitance of 63 pF, which enhances its switching capabilities.

With a drain-source voltage of 250V and power dissipation of 320W at 25°C, the FDP51N25 N-Channel MOSFET TO220-3 is suitable for various applications such as ATX power supplies and electronic lamp ballasts. Its robust thermal resistance ensures reliable performance even in demanding conditions. Choose the FDP51N25 N-Channel MOSFET for reliable, high-efficiency solutions in your electronic designs.

Explore the full potential of the onsemi FDP51N25 N-Channel MOSFET TO220-3 for your projects. Its advanced features make it a trustworthy choice for engineers looking for quality and performance in MOSFETs.

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Features of onsemi FDP51N25 N-Channel MOSFET TO220-3

• High Current Capability: 51 A
• Low Gate Charge: 55 nC
• Low Reverse Transfer Capacitance: 63 pF

Specification of onsemi FDP51N25 N-Channel MOSFET TO220-3

• Drain-Source Voltage: 250 V
• Gate-Source Voltage: ±30 V
• Power Dissipation: 320 W
• Thermal Resistance Junction-to-Case: 0.39°C/W
• Operating Junction Temperature: -55°C to +150°C
• Package: TO-220-3

Applications of onsemi FDP51N25 N-Channel MOSFET TO220-3

• Power Factor Correction
• Flat Panel Display Power Supplies
• ATX Power Supplies
• Electronic Lamp Ballasts

Related Links for onsemi FDP51N25 N-Channel MOSFET TO220-3

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X FDP51N25 N CHANNEL MOSFET TO220 3