IKW75N65EH5 High Speed 5th Switching IGBT
- Stock: 5
- SKU: 8144 | DAH644
-
Rs. 502.59 (inc GST)
Rs.425.92 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
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IKW75N65EH5 High Speed 5th Switching IGBT
IKW75N65EH5 IGBT for high-speed switching, 650 V max voltage, 75 A continuous current, and integrated soft recovery diode.
The IKW75N65EH5 High Speed 5th Switching IGBT is designed for high-frequency switching applications. It features a collector-emitter voltage rating of 650 V and a continuous collector current of 75 A. This IGBT optimizes performance by minimizing conduction and switching losses, making it ideal for industrial, renewable energy, and electric vehicle applications. The integrated soft recovery diode reduces electromagnetic interference, ensuring efficient operation in hard-switching environments.
With a robust design, the IKW75N65EH5 offers high reliability against short-circuit and overcurrent conditions, making it suitable for demanding applications. Its switching frequency capability of up to 20 kHz enhances its performance in various power supply configurations. The IKW75N65EH5 High Speed 5th Switching IGBT is a dependable choice for any electronic component needs.
Explore the advantages of the IKW75N65EH5 and consider it for your next project. Its operating temperature range of -55°C to +175°C ensures versatility in diverse environments.
Explore the reliable solutions from DNA for the MOSFET & IGBT category. Check out the Infineon IKW75N65EH5 and other quality products available. Check other "MOSFET & IGBT" that we have in stock.
If you're looking for specific electronic components like inductors, capacitors, or even DC to DC converters, contact us at DNA. We can help you find what you need or import parts if they're not available. We support both retail and bulk orders. Contact Us.
Features of IKW75N65EH5 High Speed 5th Switching IGBT
- High-Speed Switching
- Low Loss Performance
- Integrated Soft Recovery Diode
- Rugged Design
- High Collector-Emitter Voltage (VCE)
Specification of IKW75N65EH5 High Speed 5th Switching IGBT
- Collector-Emitter Voltage (VCE): 650 V
- Continuous Collector Current (IC): 75 A
- Pulsed Collector Current (ICM): 150 A
- Gate-Emitter Voltage (VGE): ±20 V
- Power Dissipation (PD): Up to 312 W
- Switching Frequency: Up to 20 kHz
- Typical Turn-On Delay Time: ~25 ns
- Typical Turn-Off Delay Time: ~100 ns
- Operating Temperature Range: -55°C to +175°C
- Package: TO-247
Applications of IKW75N65EH5 High Speed 5th Switching IGBT
- Industrial Inverters
- Renewable Energy
- Power Supplies
- Electric Vehicles
- Welding Equipment
Package Includes
- 1 X IKW75N65EH5 High Speed 5th Switching IGBT
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