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IKW75N65EH5 High Speed 5th Switching IGBT
- Stock: 5
- SKU: 8144 | DAH644
-
Rs. 502.59 (inc GST)
Rs.425.92 + GSTQty :
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IKW75N65EH5 High Speed 5th Switching IGBT
IKW75N65EH5 High Speed 5th Switching IGBT
The IKW75N65EH5 is a high-speed 5th-generation Insulated Gate Bipolar Transistor (IGBT) developed by Infineon Technologies. It is optimized for high-frequency switching applications, offering a balance between low conduction and switching losses. The device integrates a free-wheeling diode to enhance efficiency in hard-switching environments, making it suitable for industrial, renewable energy, and motor drive applications.
DNA solutions, Nashik has various types of IGBT's. Check out our complete collection of IGBT's.
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Features of IKW75N65EH5 High Speed 5th Switching IGBT
- High-Speed Switching: Optimized for frequencies up to 20 kHz
- Low Loss Performance: Reduced switching and conduction losses for better efficiency
- Integrated Soft Recovery Diode: Ensures minimal electromagnetic interference (EMI) during switching
- Rugged Design: Offers high reliability with robust short-circuit and overcurrent capabilities
- High Collector-Emitter Voltage (VCE): Rated up to 650 V
Specifications of IKW75N65EH5 High Speed 5th Switching IGBT
- Collector-Emitter Voltage (VCE): 650 V
- Continuous Collector Current (IC): 75 A
- Pulsed Collector Current (ICM): 150 A
- Gate-Emitter Voltage (VGE): ±20 V
- Power Dissipation (PD): Up to 312 W
- Switching Frequency: Up to 20 kHz
- Typical Turn-On Delay Time: ~25 ns
- Typical Turn-Off Delay Time: ~100 ns
- Operating Temperature Range: -55°C to +175°C
- Package: TO-247
Applications of IKW75N65EH5 High Speed 5th Switching IGBT
- Industrial Inverters
- Renewable Energy
- Power Supplies
- Electric Vehicles
- Welding Equipment
Package Includes
1 x IKW75N65EH5 High Speed 5th Switching IGBT
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