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IRFB4332 POWER MOSFET (N Channel)
- Stock: 50
- SKU: 3691 | DAF011
-
Rs. 239.54 (inc GST)
Rs.203.00 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
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IRFB4332 N Channel Power MOSFET for PDP Applications
IRFB4332 N-Channel MOSFET, 250V, 60A, 0.033 ohm, ideal for PDP sustain and energy recovery.
The IRFB4332 N Channel Power MOSFET is designed for plasma display panel (PDP) applications. With a voltage rating of 250V and a current capacity of 60A, this MOSFET excels in sustain, energy recovery, and pass switch functions. Its low on-resistance of 0.033 ohm enhances efficiency, making it a reliable choice for demanding applications. The device operates at a junction temperature of 175°C, ensuring robustness in various environments.
This IRFB4332 N Channel Power MOSFET features high repetitive peak current capability and low EPULSE rating, which minimizes power dissipation during operation. These characteristics make it suitable for high-performance PDP applications. The advanced process technology used in its design ensures that it achieves optimal performance in energy recovery scenarios.
Choose the IRFB4332 N Channel Power MOSFET for its fast response, short fall and rise times, and ruggedness. This device demonstrates excellent reliability and efficiency, making it an ideal component for your electronic projects. Explore our collection to find the right MOSFET for your needs.
Discover quality products in the MOSFET & IGBT category at DNA. Find the IRFB4332 N Channel Power MOSFET and other efficient solutions for your electronics. Check other 'MOSFET & IGBT' that we have in stock.
For Indian electronics buyers, if you need specific components, reach out to us. We can help import what you require and support both retail and bulk orders. Explore related items like DC to DC Converter Modules, Development Modules, HMI Displays, and more. Contact Us.
Features of IRFB4332 N Channel Power MOSFET
- Advanced Process Technology
- High Repetitive Peak Current Capability
- Low EPULSE Rating
- Low QG for Fast Response
- Short Fall & Rise Times
- 175°C Operating Junction Temperature
- Repetitive Avalanche Capability
Specification of IRFB4332 N Channel Power MOSFET
- 250V
- 60A
- 0.033 ohm
- TO-220AB
- Through Hole
Applications of IRFB4332 N Channel Power MOSFET
- Plasma Display Panels
- Energy Recovery Systems
- Power Switching Applications
- High-Performance Electronics
Related Links for IRFB4332 N Channel Power MOSFET for PDP Applications
Package Includes
- 1 X IRFB4332 N Channel Power MOSFET
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