STP60NF10 Power MOSFET

This Power MOSFET series realized with STMicro electronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge.

It is there fore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

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Features of STP60NF10 MOSFET

• Exceptional dv/dt capability

• 100% avalanche tested

• VDS Drain-source voltage (VGS = 0) 100V

• VGS Gate-source voltage ± 20V

• ID Drain current (continuous) at TC = 25°C 80A

• ID Drain current (continuous) at TC=100°C 66A

• IDM Drain current (pulsed) 320 A

• PTOT Total dissipation at TC = 25°C 300W

• Derating factor 2W/°C

• dv/dt Peak diode recovery voltage slope 16V/ns

• EAS Single pulse avalanche energy 485J

• RthJC Thermal resistance junction-case max 0.5 °C/W

• RthJA Thermal resistance junction-ambient max 62.5 °C/W

• Tl Maximum lead temperature for soldering purpose 300 °C

• Storage temperature -55 to 175°C