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K80E08K3 36V-80A High Power N-Channel MOSFET


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  • Stock: 50

    Availability: InStock priceValidUntil: 2026-04-28

  • SKU: 6072 | DAG999

Availability: InStock priceValidUntil: 2026-04-28

  • Rs. 62.30 (inc GST)
    Rs.52.80 + GST

    Qty :

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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K80E08K3 36V-80A High Power N-Channel MOSFET

K80E08K3 N-Channel MOSFET for high-efficiency switching with 80V Vds, 80A Id, and low Rds(on).

The K80E08K3 36V-80A High Power N-Channel MOSFET is engineered for high-efficiency switching applications. Its 80V drain-source voltage and high current handling capacity make it suitable for power supplies and motor control circuits. This MOSFET features low on-state resistance, ensuring minimal power loss and enhanced efficiency in demanding applications.

With fast switching performance, the K80E08K3 optimizes operations in DC-DC converters, improving overall system efficiency. Built for rugged environments, it withstands high-voltage spikes and offers excellent thermal management for reliable operation.

Ideal for engineers and hobbyists, the K80E08K3 is widely used in various applications, including motor drives and high-power circuits. With its robust specifications, it is a preferred choice for those seeking reliable performance in MOSFET technology.

Explore the range of MOSFET & IGBT products at DNA, featuring the reliable K80E08K3 from a trusted Manufacturer. Discover exceptional performance and efficiency. Check other MOSFET & IGBT that we have in stock.

If you are searching for specific electronic components, reach out to us at DNA. We can help you find parts like Development boards, Crystals, Super Capacitors, MOSFETs, Transistors, and Inductors. We can also import items not currently in stock. Contact Us.

Features of K80E08K3 36V-80A High Power N-Channel MOSFET

  • Low Rds(on)
  • High Current Capability
  • Fast Switching Performance
  • Avalanche Ruggedness
  • Excellent Thermal Performance

Specification of K80E08K3 36V-80A High Power N-Channel MOSFET

  • Vds (Drain-Source Voltage): 80V
  • Id (Continuous Drain Current): 80-100A
  • Rds(on) (On-state Resistance): Low
  • Vgs (Gate-Source Voltage): ±20V
  • Total Gate Charge (Qg): Low
  • Power Dissipation (Pd): High
  • Operating Temperature Range: -55°C to +175°C

Applications of K80E08K3 36V-80A High Power N-Channel MOSFET

  • Motor Drives
  • Power Supplies
  • DC-DC Converters
  • High-Power Circuits
  • Industrial Automation

Related Links for K80E08K3 36V-80A High Power N-Channel MOSFET

Package Includes

  • 1 X K80E08K3 36V-80A High Power N-Channel MOSFET
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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