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K80E08K3 36V-80A High Power N-Channel MOSFET
- Stock: 50
- SKU: 6072 | DAG999
-
Rs. 62.30 (inc GST)
Rs.52.80 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
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K80E08K3 36V-80A High Power N-Channel MOSFET
K80E08K3 36V-80A High Power N-Channel MOSFET
The K80E08K3 is an N-channel Power MOSFET designed for high-efficiency switching applications. This device is commonly used in power supplies, motor control, and other high-power circuits due to its excellent switching characteristics and low on-state resistance. N-Channel Power MOSFET 80V Drain-Source Voltage (Vds)High current handling capability, designed for demanding applications. Commonly available in a TO-220 package, suitable for through-hole mounting in power circuits.
DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Features of K80E08K3 36V-80A High Power N-Channel MOSFET
- Low Rds(on): The K80E08K3 offers a low on-resistance, which minimizes power losses during operation, leading to greater efficiency in power circuits.
- High Current Capability: Designed to handle significant current, making it ideal for high-power applications such as motor drives and power supplies.
- Fast Switching Performance: Optimized for fast switching speeds, improving overall efficiency in switching applications like DC-DC converters.
- Avalanche Ruggedness: The MOSFET is built to withstand high-voltage spikes and can operate in harsh electrical environments.
- Thermal Performance: The package design and material help dissipate heat effectively, which allows the MOSFET to handle high power levels without thermal issues.
Specifications of K80E08K3 36V-80A High Power N-Channel MOSFET
- Vds (Drain-Source Voltage): 80V
- Id (Continuous Drain Current): Typically around 80-100A (depending on the specific model and conditions)
- Rds(on) (On-state Resistance): Low, typically in the milliohm range, ensuring minimal conduction losses
- Vgs (Gate-Source Voltage): ±20V
- Total Gate Charge (Qg): Low gate charge for efficient switching
- Power Dissipation (Pd): High power dissipation capability (typically in the hundreds of watts)
- Operating Temperature Range: -55°C to +175°C, ensuring reliable operation in various environments
- Vds (Drain-Source Voltage): 80V
- Id (Continuous Drain Current): Typically around 80-100A (depending on the specific model and conditions)
- Rds(on) (On-state Resistance): Low, typically in the milliohm range, ensuring minimal conduction losses
- Vgs (Gate-Source Voltage): ±20V
- Total Gate Charge (Qg): Low gate charge for efficient switching
- Power Dissipation (Pd): High power dissipation capability (typically in the hundreds of watts)
- Operating Temperature Range: -55°C to +175°C, ensuring reliable operation in various environments
Package Includes
- 1 x K80E08K3 36V-80A High Power N-Channel MOSFET
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