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FDL100N50 DIP N Channel Power MOSFET
- Stock: 3
- SKU: 8817 | DAF549
-
Rs. 460.20 (inc GST)
Rs.390.00 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com
Import Service: We import a wide range of electronic components on request.
FDL100N50 DIP N Channel Power MOSFET
FDL100N50 MOSFET, 500V, 100A, ideal for fast switching and low power loss.
The FDL100N50 DIP N Channel Power MOSFET is engineered for excellent performance in power electronics. With a **500V drain-source voltage** and **100A continuous drain current**, this device excels in applications like SMPS and PFC circuits. Its low RDS(on) minimizes conduction losses, making it a reliable choice for high-efficiency designs. The durable TO-264 package allows for superior power dissipation, ensuring stable operation even under demanding conditions.
Designed for versatility, the FDL100N50 is perfect for applications such as uninterruptible power supplies (UPS) and motor drive inverters. Its fast switching capabilities enhance system efficiency while ensuring reliability through 100% avalanche testing. This makes it an ideal component for both industrial controls and consumer electronics.
When you choose the FDL100N50 DIP N Channel Power MOSFET, you invest in quality and performance. Explore how this component can optimize your electronic designs, providing a robust solution for a wide range of power applications in India.
Explore our range of MOSFET & IGBT products at DNA Solutions. The FDL100N50 by a trusted manufacturer offers superior performance. Check other "MOSFET & IGBT" that we have in stock.
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Features of FDL100N50 DIP N Channel Power MOSFET
- 500V drain-source voltage capability
- 100A continuous drain current
- Low RDS(on) for reduced conduction losses
- Fast switching for high-efficiency designs
- 100% avalanche tested for reliability
- TO-264 package for high power dissipation
Specification of FDL100N50 DIP N Channel Power MOSFET
- Drain-Source Voltage (VDSS): 500V
- Continuous Drain Current: 100A
- Total Gate Charge (Qg): 238nC
- RDS(on): 0.043Ω (typical)
- Input Capacitance (Ciss): 12000pF
- Package: TO-264 (DIP Style)
Applications of FDL100N50 DIP N Channel Power MOSFET
- Power factor correction (PFC)
- High voltage DC-DC converters
- Uninterruptible power supplies (UPS)
- Switch mode power supplies (SMPS)
- Motor drive inverters
Related Links for FDL100N50 DIP N Channel Power MOSFET
Package Includes
- 1 X FDL100N50 DIP N Channel Power MOSFET
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