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SI2310 60V 3A N-Channel MOSFET (SOT23 )

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Stock: 80
Availability: InStock priceValidUntil: 2026-09-23
SKU: 6020 | DAG870

Rs. 21.48 (inc GST)
Rs.18.20 + GST

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GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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Import Service: We import a wide range of electronic components on request.

Description

SI2310 60V 3A N-Channel MOSFET for Low Voltage Applications

SI2310 60V 3A N-Channel MOSFET for low-voltage applications with 105 mOhms resistance and 6 nC gate charge.

The SI2310 60V 3A N-Channel MOSFET is designed for low-voltage applications, utilizing advanced DMOS technology to minimize on-state resistance. This N-Channel enhancement mode FET eliminates the need for bias resistors, simplifying circuit designs while ensuring efficient performance. Ideal for applications such as motor control and LED dimmers, the SI2310 provides reliable switching for high-power devices.

With a gate-source voltage range of -20V to +20V and a threshold voltage of 2V, the SI2310 60V 3A N-Channel MOSFET excels in high-speed switching scenarios and converters. Its low drain-source resistance of 105 mOhms facilitates optimal energy efficiency, making it a suitable choice for various electronic projects.

This versatile component is perfect for electronic enthusiasts and professionals in India. Whether you're designing motor speed controllers or inverter circuits, the SI2310 delivers the performance you need for precise control and functionality.

Explore the world of MOSFET & IGBT with DNA. The SI2310 60V 3A N-Channel MOSFET is a key component for your electronic projects. Check other "MOSFET & IGBT" that we have in stock.

Are you searching for specific electronic components? DNA can help you find parts like Microcontrollers, Power Supplies, and MOSFETs. If you need help locating a part, reach out to us. We can import items not in stock and support you in retail and bulk orders. Contact Us.

Features of SI2310 60V 3A N-Channel MOSFET

N-Channel enhancement mode
Low on-state resistance
No bias resistors required
High-speed switching
Suitable for low-voltage applications

Specification of SI2310 60V 3A N-Channel MOSFET

Drain-Source Resistance: 105 mOhms
Gate-Source Voltage: -20V to +20V
Gate Charge: 6 nC
Gate-Source Threshold Voltage: 2V

Applications of SI2310 60V 3A N-Channel MOSFET

Motor speed control
LED dimmers
High-power device switching
High-speed switching applications
Converters and inverter circuits

Package Includes

1 X SI2310 60V 3A N-Channel MOSFET (SOT23)

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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