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SI2310 60V 3A N-Channel MOSFET (SOT23 )
- Stock: 80
- SKU: 6020 | DAG870
-
Rs. 21.48 (inc GST)
Rs.18.20 + GSTQty :
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SI2310 60V 3A N-Channel MOSFET for Low Voltage Applications
SI2310 60V 3A N-Channel MOSFET for low-voltage applications with 105 mOhms resistance and 6 nC gate charge.
The SI2310 60V 3A N-Channel MOSFET is designed for low-voltage applications, utilizing advanced DMOS technology to minimize on-state resistance. This N-Channel enhancement mode FET eliminates the need for bias resistors, simplifying circuit designs while ensuring efficient performance. Ideal for applications such as motor control and LED dimmers, the SI2310 provides reliable switching for high-power devices.
With a gate-source voltage range of -20V to +20V and a threshold voltage of 2V, the SI2310 60V 3A N-Channel MOSFET excels in high-speed switching scenarios and converters. Its low drain-source resistance of 105 mOhms facilitates optimal energy efficiency, making it a suitable choice for various electronic projects.
This versatile component is perfect for electronic enthusiasts and professionals in India. Whether you're designing motor speed controllers or inverter circuits, the SI2310 delivers the performance you need for precise control and functionality.
Explore the world of MOSFET & IGBT with DNA. The SI2310 60V 3A N-Channel MOSFET is a key component for your electronic projects. Check other "MOSFET & IGBT" that we have in stock.
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Features of SI2310 60V 3A N-Channel MOSFET
- N-Channel enhancement mode
- Low on-state resistance
- No bias resistors required
- High-speed switching
- Suitable for low-voltage applications
Specification of SI2310 60V 3A N-Channel MOSFET
- Drain-Source Resistance: 105 mOhms
- Gate-Source Voltage: -20V to +20V
- Gate Charge: 6 nC
- Gate-Source Threshold Voltage: 2V
Applications of SI2310 60V 3A N-Channel MOSFET
- Motor speed control
- LED dimmers
- High-power device switching
- High-speed switching applications
- Converters and inverter circuits
Package Includes
- 1 X SI2310 60V 3A N-Channel MOSFET (SOT23)
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