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HY3410P N Channel Power MOSFET

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Stock: 10
Availability: InStock priceValidUntil: 2026-12-04
SKU: 9005 | DAI078

Rs. 77.23 (inc GST)
Rs.65.45 + GST
Qty : Qty Qty

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

HY3410P N Channel Power MOSFET

HY3410P N Channel MOSFET for fast switching, low RDS(on) 9mΩ, 52A current handling.

The HY3410P N Channel Power MOSFET is ideal for applications requiring fast switching and efficient power conversion. This MOSFET offers low RDS(on) of 9mΩ, ensuring higher efficiency in power management systems. With a continuous drain current of 52A, it is suitable for DC-DC converters, battery protection, and motor control circuits. The compact TO-220 package provides reliable thermal performance in demanding environments.

Engineered for high performance, the HY3410P N Channel Power MOSFET features low gate charge, which contributes to its high-speed switching capabilities. This makes it an excellent choice for power supplies and other electronic applications where efficiency is critical. Its robust design ensures that it can handle higher currents without compromising performance.

If you need a reliable solution for your electronic projects, consider the HY3410P N Channel Power MOSFET. With its superior specifications and versatile applications, it stands out in the MOSFET & IGBT category. Explore how this component can enhance your designs.

At DNA, we offer a wide range of quality MOSFET & IGBT components from trusted manufacturers. Discover the HY3410P N Channel Power MOSFET and explore other products in this category. Check other MOSFET & IGBT that we have in stock.

If you can't find the electronic components you need, reach out to us. We can import parts not in stock and support you in retail as well as bulk orders. Explore related items like Power Supply, Connectors, Transistors, and more. Contact Us.

Features of HY3410P N Channel Power MOSFET

Low RDS(on) for higher efficiency
High-speed switching
Low gate charge
High current handling capability
TO-220 package for excellent thermal performance

Specification of HY3410P N Channel Power MOSFET

Drain to Source Voltage (VDS): 100V
Continuous Drain Current (ID): 52A
RDS(on): 9mΩ max
Gate Threshold Voltage: 2V–4V
Package Type: TO-220

Applications of HY3410P N Channel Power MOSFET

DC-DC converters
Battery protection circuits
Motor control circuits
Power management

Package Includes

1 X HY3410P N Channel Power MOSFET

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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