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HY3410P N Channel Power MOSFET
- Stock: 25
- SKU: 9005 | DAi078
-
Rs. 77.23 (inc GST)
Rs.65.45 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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HY3410P N Channel Power MOSFET
HY3410P N Channel MOSFET for fast switching, low RDS(on) 9mΩ, 52A current handling.
The HY3410P N Channel Power MOSFET is ideal for applications requiring fast switching and efficient power conversion. This MOSFET offers low RDS(on) of 9mΩ, ensuring higher efficiency in power management systems. With a continuous drain current of 52A, it is suitable for DC-DC converters, battery protection, and motor control circuits. The compact TO-220 package provides reliable thermal performance in demanding environments.
Engineered for high performance, the HY3410P N Channel Power MOSFET features low gate charge, which contributes to its high-speed switching capabilities. This makes it an excellent choice for power supplies and other electronic applications where efficiency is critical. Its robust design ensures that it can handle higher currents without compromising performance.
If you need a reliable solution for your electronic projects, consider the HY3410P N Channel Power MOSFET. With its superior specifications and versatile applications, it stands out in the MOSFET & IGBT category. Explore how this component can enhance your designs.
At DNA, we offer a wide range of quality MOSFET & IGBT components from trusted manufacturers. Discover the HY3410P N Channel Power MOSFET and explore other products in this category. Check other MOSFET & IGBT that we have in stock.
If you can't find the electronic components you need, reach out to us. We can import parts not in stock and support you in retail as well as bulk orders. Explore related items like Power Supply, Connectors, Transistors, and more. Contact Us.
Features of HY3410P N Channel Power MOSFET
- Low RDS(on) for higher efficiency
- High-speed switching
- Low gate charge
- High current handling capability
- TO-220 package for excellent thermal performance
Specification of HY3410P N Channel Power MOSFET
- Drain to Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 52A
- RDS(on): 9mΩ max
- Gate Threshold Voltage: 2V–4V
- Package Type: TO-220
Applications of HY3410P N Channel Power MOSFET
- DC-DC converters
- Battery protection circuits
- Motor control circuits
- Power management
Package Includes
- 1 X HY3410P N Channel Power MOSFET
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