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P80NF55 Power MOSFET
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P80NF55 Power MOSFET
P80NF55 Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features of P80NF55 Power MOSFET
Standard threshold drive
VDS Drain-source voltage (VGS = 0) 55 V
VGS Gate- source voltage ±20 V
ID Drain current (continuos) at TC = 25 °C 80 A
ID Drain current (continuos) at TC = 100 °C 80 A
IDM Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 300 W
Derating factor 2 W/°C
Tj Operating junction temperature
Tstg Storage temperature -55 to 175 °C
Application of P80NF55 Power MOSFET
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