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SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

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Stock: Out Of Stock
Availability: NotInStock priceValidUntil: 2026-11-24
SKU: 8081 | DAH167

Rs. 6.14 (inc GST)
Rs.5.20 + GST
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Delivery: 2–8 days across India. No MOQ required.

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Description

SS8050G NPN Bipolar Transistor

SS8050G NPN Transistor for amplification and switching, 25V max voltage, 1.5A max current.

The SS8050G NPN Bipolar Transistor is ideal for general-purpose amplification and switching applications. With a maximum collector-emitter voltage of 25V and a collector current of 1.5A, it provides reliable performance. The compact SOT-23-3 package allows for easy integration into space-constrained designs. This transistor features a high current gain ranging from 100 to 300, making it suitable for various electronic circuits.

In addition to its compact size, the SS8050G NPN Bipolar Transistor excels in high-speed switching capabilities. It is widely used in signal amplification for low-power circuits, switching applications, DC-DC converters, small motor drivers, and LED drivers. Its versatility makes it a preferred choice among engineers and hobbyists alike.

Explore the potential of the SS8050G NPN Bipolar Transistor for your electronic projects. Whether you are designing small devices or larger systems, this transistor meets your requirements with ease. Make sure to check out other related products in the Diodes & Transistors category.

At DNA, we offer a wide range of high-quality Diodes & Transistors from trusted manufacturers. Explore the Diodes & Transistors category to find the right components for your project. Check other "Diodes & Transistors" that we have in stock.

If you're searching for specific electronic components, reach out to us. We can help you find items like Development Modules, Super Capacitors, IGBTs, Sensor Modules, and more. We can also import parts that are not available. Contact Us

Features of SS8050G NPN Bipolar Transistor

NPN Bipolar Junction Transistor
Maximum collector-emitter voltage (V_CE): 25 V
Maximum collector current (I_C): 1.5 A
Power dissipation (P_tot): 0.5 W
High current gain (h_FE): 100-300
Compact SOT-23-3 package

Specification of SS8050G NPN Bipolar Transistor

Transistor Type: NPN
Package Type: SOT-23-3
Collector-Emitter Voltage (V_CE): 25 V
Collector-Base Voltage (V_CB): 40 V
Emitter-Base Voltage (V_EB): 5 V
Collector Current (I_C): 1.5 A
Power Dissipation (P_tot): 0.5 W
DC Current Gain (h_FE): 100 - 300

Applications of SS8050G NPN Bipolar Transistor

Signal amplification in low-power circuits
Switching applications in electronic devices
DC-DC converters
Small motor drivers
LED drivers

Package Includes

1 X SS8050G NPN Bipolar Transistor

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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