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SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

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Stock: Out Of Stock
Availability: NotInStock priceValidUntil: 2026-02-27
SKU: 8081 | DAH167

Rs. 6.14 (inc GST)
Rs.5.20 + GST

Qty :
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Delivery: 2–8 days across India. No MOQ required.

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Description

SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

The SS8050G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Packaged in a compact SOT-23-3 form, it is ideal for use in space-constrained designs requiring a small, surface-mount solution. Its reliable performance and wide operating range make it a versatile component in various electronic circuits.

DNA solutions, Nashik has various types of Transistors. Check out our complete collection of Transistors.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

NPN Bipolar Junction Transistor
Maximum collector-emitter voltage (V_CE): 25 V
Maximum collector current (I_C): 1.5 A
Power dissipation (P_tot): 0.5 W
High current gain (h_FE): 100-300
Compact SOT-23-3 package for surface mount applications
High-speed switching capability

Specifications of SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

Transistor Type: NPN
Package Type: SOT-23-3
Collector-Emitter Voltage (V_CE): 25 V
Collector-Base Voltage (V_CB): 40 V
Emitter-Base Voltage (V_EB): 5 V
Collector Current (I_C): 1.5 A
Power Dissipation (P_tot): 0.5 W
DC Current Gain (h_FE): 100 - 300

Applications of SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

Signal amplification in low-power circuits
Switching applications in electronic devices
DC-DC converters
Small motor drivers
LED drivers

Package Includes

1 x SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

Qty :

SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

DNA solutions, Nashik has various types of Transistors. Check out our complete collection of Transistors.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

NPN Bipolar Junction TransistorMaximum collector-emitter voltage (V_CE): 25 VMaximum collector current (I_C): 1.5 APower dissipation (P_tot): 0.5 WHigh current gain (h_FE): 100-300Compact SOT-23-3 package for surface mount applicationsHigh-speed switching capability

Specifications of SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

Transistor Type: NPNPackage Type: SOT-23-3Collector-Emitter Voltage (V_CE): 25 VCollector-Base Voltage (V_CB): 40 VEmitter-Base Voltage (V_EB): 5 VCollector Current (I_C): 1.5 APower Dissipation (P_tot): 0.5 WDC Current Gain (h_FE): 100 - 300

Applications of SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

Signal amplification in low-power circuitsSwitching applications in electronic devicesDC-DC convertersSmall motor driversLED drivers

Package Includes

1 x SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

Write a review

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NPN Bipolar Junction Transistor
Maximum collector-emitter voltage (V_CE): 25 V
Maximum collector current (I_C): 1.5 A
Power dissipation (P_tot): 0.5 W
High current gain (h_FE): 100-300
Compact SOT-23-3 package for surface mount applications
High-speed switching capability

Transistor Type: NPN
Package Type: SOT-23-3
Collector-Emitter Voltage (V_CE): 25 V
Collector-Base Voltage (V_CB): 40 V
Emitter-Base Voltage (V_EB): 5 V
Collector Current (I_C): 1.5 A
Power Dissipation (P_tot): 0.5 W
DC Current Gain (h_FE): 100 - 300

Signal amplification in low-power circuits
Switching applications in electronic devices
DC-DC converters
Small motor drivers
LED drivers