TIP147 Darlington Silicon Power Transistors

TIP147 Darlington Silicon Power Transistor

TIP147 transistor for general-purpose amplification with high gain, 100V Collector-Emitter voltage, and 125W power dissipation.

The TIP147 Darlington Silicon Power Transistor is ideal for general-purpose amplification and low frequency switching applications. This transistor features a high DC current gain of a minimum hFE of 1000 at an IC of 5.0 A and VCE of 4 V. With a collector-emitter sustaining voltage of 100V, it ensures reliable performance in various electronic circuits.

Designed with monolithic construction, the TIP147 includes a built-in base-emitter shunt resistor, making it convenient for integration into your designs. Its temperature range of -65 to +150°C ensures stability across diverse operating conditions. Whether you are designing power amplifiers or switching applications, this transistor meets your needs effectively.

Choose the TIP147 Darlington Silicon Power Transistor for your projects to achieve optimal results in amplifier circuits and switching applications. This component is Pb-free, supporting your efforts in eco-friendly electronics.

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Features of TIP147 Darlington Silicon Power Transistor

• High DC Current Gain
• Collector-Emitter Sustaining Voltage 100V
• Monolithic Construction with Shunt Resistor
• Pb-Free Device
• Wide Temperature Range -65 to +150°C

Specification of TIP147 Darlington Silicon Power Transistor

• Collector-Emitter Voltage VCEO 100 Vdc
• Collector-Base Voltage VCB 100 Vdc
• Emitter-Base Voltage VEB 5.0 Vdc
• Base Current Continuous IB 0.5 Adc
• Total Power Dissipation @ TC = 25°C PD 125W

Applications of TIP147 Darlington Silicon Power Transistor

• General-purpose amplification
• Low frequency switching applications
• Power amplifier circuits
• Signal processing
• Electronic control systems

Related Links for TIP147 Darlington Silicon Power Transistor

• Other Products from Diodes & Transistors Category

Package Includes

• 1 X TIP147 Darlington Silicon Power Transistor