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TIP147 Darlington Silicon Power Transistors

Write a review | 2 reviews

Stock: 45
Availability: InStock priceValidUntil: 2026-05-04
SKU: 683 | DAA209

Rs. 64.90 (inc GST)
Rs.55.00 + GST

Qty :
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GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

TIP147 Darlington Silicon Power Transistors

TIP147 transistor is designed for general-purpose amplifier and low frequency switching applications.

Features of TIP147 Darlington Silicon Power Transistors

High DC Current Gain -Min h_FE = 1000 @ I_C= 5.0 A, V_CE = 4 V
Collector-Emitter Sustaining Voltage - @ 30 mA V_CEO(sus) = 100Vdc (Min)
Monolithic Construction with Built-In Base-Emitter Shunt Resistor
These are Pb-Free Devices
Collector - Emitter Voltage V_CEO 100 Vdc
Collector - Base Voltage V_CB 100 Vdc
Emitter - Base Voltage V_EB 5.0 Vdc
Operating and Storage Junction Temperature Range T_J, T_stg -65 to +150 ^oC
Base Current - Continuous I_B 0.5 Adc
Total Power Dissipation @ T_C = 25oC P_D 125W

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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TIP147 Darlington Silicon Power Transistors

Qty :

TIP147 Darlington Silicon Power Transistors

Features of TIP147 Darlington Silicon Power Transistors

High DC Current Gain -Min hFE = 1000 @ IC= 5.0 A, VCE = 4 V

Collector-Emitter Sustaining Voltage - @ 30 mA VCEO(sus) = 100Vdc (Min)

Monolithic Construction with Built-In Base-Emitter Shunt Resistor

These are Pb-Free Devices

Collector - Emitter Voltage VCEO 100 Vdc

Collector - Base Voltage VCB 100 Vdc

Emitter - Base Voltage VEB 5.0 Vdc

Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 oC

Base Current - Continuous IB 0.5 Adc

Total Power Dissipation @ TC = 25oC PD 125W

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High DC Current Gain -Min h_FE = 1000 @ I_C= 5.0 A, V_CE = 4 V

Collector-Emitter Sustaining Voltage - @ 30 mA V_CEO(sus) = 100Vdc (Min)

Collector - Emitter Voltage V_CEO 100 Vdc

Collector - Base Voltage V_CB 100 Vdc

Emitter - Base Voltage V_EB 5.0 Vdc

Operating and Storage Junction Temperature Range T_J, T_stg -65 to +150 ^oC

Base Current - Continuous I_B 0.5 Adc

Total Power Dissipation @ T_C = 25oC P_D 125W