FQPF7N80C N‑Channel MOSFET TO‑220F Package
- Stock: 25 InStock
- SKU: 10002 | DAI992
-
Rs.
147.50 (inc GST)
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FQPF7N80C N‑Channel MOSFET TO‑220F Package
FQPF7N80C: High‑Voltage N‑Channel MOSFET for Switching & PFC Applications
The FQPF7N80C is a robust N‑Channel power MOSFET designed for demanding high‑voltage applications, boasting an 800 V drain‑source voltage rating and 6.6 A continuous drain current. Built with Fairchild/onsemi’s advanced planar‑stripe DMOS QFET® technology, it delivers low on‑state resistance (1.9 Ω max at VGS=10 V), fast switching, low gate charge (~27 nC), and low Crss (~10 pF), making it ideal for high‑efficiency switched‑mode power supplies, active PFC circuits, and electronic lamp ballasts. The device is packaged in TO‑220F for improved isolation and thermal management.
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Features of FQPF7N80C MOSFET
- 800 V drain‑source breakdown voltage
- Continuous drain current: 6.6 A (at TC=25 °C)
- Low RDS(on): 1.9 Ω max (@ VGS = 10 V, ID = 3.3 A)
- Low gate charge (~27 nC typical)
- Low Crss (~10 pF typical)
- 100% avalanche tested
- TO‑220F fully‑isolated package
Specifications of FQPF7N80C MOSFET
- Transistor Type: N‑Channel Enhancement Mode MOSFET (QFET®)
- VDSS (Drain‑Source Voltage): 800 V
- ID (Continuous Drain Current): 6.6 A (TC=25 °C)
- RDS(on): 1.9 Ω max @ VGS=10 V, ID=3.3 A
- Total Gate Charge (Qg): ~27 nC typical
- Reverse Transfer Capacitance (Crss): ~10 pF typical
- Gate‑Source Voltage (VGS): ±30 V max
- Operating Temperature (Tj): –55 °C to +150 °C
- Power Dissipation (PD): ~56 W (TC=25 °C)
- Package: TO‑220F (fully‑isolated)
Applications of FQPF7N80C MOSFET
- Switched‑mode power supplies (SMPS)
- Active power factor correction (PFC) stages
- Electronic lamp ballasts and inverters
- High‑voltage switching circuits and industrial power equipment
Related Links
Package Includes
- 1 × FQPF7N80C N‑Channel MOSFET (TO‑220F)
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