FQPF7N80C N‑Channel MOSFET TO‑220F Package

Fairchild N‑Channel MOSFET FQPF7N80C for High-Voltage Applications

FQPF7N80C N‑Channel MOSFET for high-voltage switching; 800V drain-source voltage; 6.6A continuous drain current.

The Fairchild N‑Channel MOSFET FQPF7N80C is engineered for high-voltage applications with an impressive 800V drain-source voltage rating. This robust MOSFET features a continuous drain current of 6.6A and low on-state resistance of 1.9Ω, making it ideal for efficient power management in switched-mode power supplies and active PFC circuits. Its TO-220F package enhances thermal management and isolation, ensuring reliable performance.

Designed with advanced DMOS QFET® technology, the FQPF7N80C delivers fast switching and low gate charge, which are critical for high-efficiency applications. With a maximum operating temperature of 150°C, it withstands challenging conditions in industrial power equipment. This MOSFET is 100% avalanche tested, further assuring its reliability in demanding environments.

For Indian customers seeking dependable electronic solutions, the FQPF7N80C is a top choice in the MOSFET & IGBT category. Its versatility extends to applications in electronic lamp ballasts and high-voltage switching circuits. Elevate your projects with this efficient component today.

Explore the reliability of MOSFET & IGBT products at DNA. The Fairchild brand offers exceptional performance in high-voltage applications. Browse our selection and discover other MOSFET & IGBT options available. Check other "MOSFET & IGBT" that we have in stock.

At DNA, we cater to the needs of Indian electronics buyers. If you cannot find certain parts, we can import them for you. We support both retail and bulk purchases. Explore related items like LCDs, Digital ICs, Microcontrollers, and more. Contact Us.

Features of Fairchild N‑Channel MOSFET FQPF7N80C

• 800V drain-source breakdown voltage
• Continuous drain current: 6.6A (at TC=25°C)
• Low RDS(on): 1.9Ω max (@ VGS = 10V, ID = 3.3A)
• Low gate charge (~27nC typical)
• Low Crss (~10pF typical)
• 100% avalanche tested
• TO-220F fully-isolated package

Specification of Fairchild N‑Channel MOSFET FQPF7N80C

• Transistor Type: N‑Channel Enhancement Mode MOSFET (QFET®)
• VDSS (Drain‑Source Voltage): 800V
• ID (Continuous Drain Current): 6.6A (TC=25°C)
• RDS(on): 1.9Ω max @ VGS=10V, ID=3.3A
• Total Gate Charge (Qg): ~27nC typical
• Reverse Transfer Capacitance (Crss): ~10pF typical
• Gate‑Source Voltage (VGS): ±30V max
• Operating Temperature (Tj): –55°C to +150°C
• Power Dissipation (PD): ~56W (TC=25°C)
• Package: TO-220F (fully-isolated)

Applications of Fairchild N‑Channel MOSFET FQPF7N80C

• Switched-mode power supplies (SMPS)
• Active power factor correction (PFC) stages
• Electronic lamp ballasts and inverters
• High-voltage switching circuits
• Industrial power equipment

Related Links for Fairchild N‑Channel MOSFET FQPF7N80C for High-Voltage Applications

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X Fairchild N‑Channel MOSFET FQPF7N80C (TO‑220F)