IRFBG30 N Channel 1000V Power MOSFET TO 220 Package

IRFBG30 N Channel 1000V Power MOSFET TO 220 Package

The IRFBG30 is an N-Channel Power MOSFET designed to handle high voltage and high-speed switching. Manufactured by Infineon (formerly International Rectifier), this device is optimized for use in high-power and high-frequency applications. It is built with advanced MOSFET technology, offering low on-resistance and fast switching characteristics, making it suitable for demanding environments.

DNA solutions, Nashik has various types of MOSFET. Check out our complete collection of MOSFET.

• High Voltage Capability: Can handle voltages up to 1000 V

• Low R_DS(on): Ensures minimal conduction losses for higher efficiency

• Fast Switching Speed: Ideal for high-frequency applications, reducing switching losses

• Rugged Design: Capable of withstanding voltage spikes and other transient conditions

Specifications of IRFBG30 N-Channel 1000V Power MOSFET TO 220 Package

• Device Type: N-Channel MOSFET

• Drain-Source Voltage: 1000 V

• Continuous Drain Current: ~2.5 A (at 25°C, TO-220 package)

• Pulsed Drain Current: ~10 A

• Gate Threshold Voltage: 2.0 - 4.0 V

• Maximum Gate-Source Voltage:  ±20 V

Applications of IRFBG30 N Channel 1000V Power MOSFET TO 220 Package

• Switch-mode power supplies

• Lighting Systems

• Industrial Equipment

• Renewable Energy

• Consumer Electronics

Package Includes

      1 x IRFBG30 N Channel 1000V Power MOSFET TO 220 Package