Infineon IRFBG30 N-Channel 1000V Power MOSFET

IRFBG30 N-Channel MOSFET for high voltage applications with low on-resistance and fast switching speed.

The Infineon IRFBG30 N-Channel 1000V Power MOSFET is designed for high voltage and high-speed switching applications. This device supports voltages up to 1000V and is ideal for demanding environments such as switch-mode power supplies and renewable energy systems. With its low on-resistance, it ensures minimal conduction losses, enhancing overall efficiency. The IRFBG30 also features a rugged design that withstands voltage spikes, making it suitable for industrial equipment and consumer electronics.

Engineered with advanced MOSFET technology, the Infineon IRFBG30 offers fast switching speeds, reducing switching losses in high-frequency applications. Its continuous drain current can reach approximately 2.5A, making it a reliable choice for various applications. Whether you are building lighting systems or working on industrial projects, the IRFBG30 N-Channel MOSFET provides the performance you need.

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Features of Infineon IRFBG30 N-Channel 1000V Power MOSFET

• High Voltage Capability: 1000 V
• Low R_DS(on): Higher efficiency
• Fast Switching Speed: Ideal for high-frequency applications
• Rugged Design: Withstands voltage spikes

Specification of Infineon IRFBG30 N-Channel 1000V Power MOSFET

• Device Type: N-Channel MOSFET
• Drain-Source Voltage: 1000 V
• Continuous Drain Current: ~2.5 A
• Pulsed Drain Current: ~10 A
• Gate Threshold Voltage: 2.0 - 4.0 V
• Maximum Gate-Source Voltage: ±20 V

Applications of Infineon IRFBG30 N-Channel 1000V Power MOSFET

• Switch-mode power supplies
• Lighting Systems
• Industrial Equipment
• Renewable Energy
• Consumer Electronics

Related Links for Infineon IRFBG30 N-Channel 1000V Power MOSFET

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X Infineon IRFBG30 N-Channel 1000V Power MOSFET