FQU13N10L N-Channel Enhancement Mode Power MOSFET

FQU13N10L MOSFET for efficient switching with 100V VDS, 12A ID, and low RDS(on) of 120mΩ.

The FQU13N10L N-Channel Enhancement Mode Power MOSFET is ideal for high-efficiency switching applications. Utilizing advanced Power Trench® technology, it minimizes conduction losses and delivers fast switching capabilities. This MOSFET is well-suited for low-voltage power management, making it a reliable choice for various electronic projects in India.

With a maximum drain-to-source voltage of 100V and a continuous drain current rating of 12A, the FQU13N10L provides robust performance across applications like DC-DC converters and motor drives. Its low RDS(on) ensures high efficiency, while the logic-level drive capability simplifies integration into existing designs.

Explore the versatility of the FQU13N10L N-Channel Enhancement Mode Power MOSFET in telecommunications equipment and automotive systems. This component is a critical part of modern electronic designs, ensuring reliability and efficiency in performance. Check out our range of MOSFETs to find the perfect fit for your needs.

At DNA, we provide high-quality MOSFET & IGBT components from trusted manufacturers. Explore our selection of MOSFET & IGBT products to enhance your electronic projects. Check other "MOSFET & IGBT" that we have in stock.

If you’re searching for specific electronic components, reach out to us at DNA. We can help you find parts like Digital ICs, Sensor Modules, or IGBTs. If it’s not available, we can import it for you and support both retail and bulk orders. Contact Us

Features of FQU13N10L N-Channel Enhancement Mode Power MOSFET

• Low RDS(on)
• High Current Capability
• Fast Switching Speed
• Logic-Level Drive Capability

Specification of FQU13N10L N-Channel Enhancement Mode Power MOSFET

• Drain-to-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 12A (at 25°C)
• RDS(on) (max): 120mΩ (at VGS = 10V)
• Gate Threshold Voltage (VGS(th)): 1V - 2.5V
• Operating Junction Temperature (Tj): -55°C to +150°C
• Gate Charge (Qg): 21nC (typical)
• Package Type: TO-252 (DPAK)

Applications of FQU13N10L N-Channel Enhancement Mode Power MOSFET

• DC-DC Converters
• Motor Drives
• Load Switches
• Telecommunications Equipment
• Automotive Systems

Related Links for FQU13N10L N-Channel Enhancement Mode Power MOSFET

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X FQU13N10L N-Channel Enhancement Mode Power MOSFET