FQU13N10L N-Channel Enhancement Mode Power MOSFET

FQU13N10L N-Channel Enhancement Mode Power MOSFET

The FQU13N10L is an N-channel enhancement mode power MOSFET designed for high-efficiency switching applications. It uses advanced Power Trench® process technology to achieve excellent performance with low conduction losses and high-speed switching. This device is particularly suited for use in low-voltage power management applications.

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• Low RDS(on): Ensures lower conduction losses, improving efficiency

• High Current Capability: Rated for high continuous and pulsed drain currents

• Fast Switching Speed: Reduces switching losses for high-frequency applications

• 100V Drain-to-Source Voltage (VDS): Provides robust operation in various applications

• Logic-Level Drive Capability: Allows operation with lower gate drive voltage

Specifications of FQU13N10L N-Channel Enhancement Mode Power MOSFET

• Drain-to-Source Voltage (VDS): 100V

• Continuous Drain Current (ID): 12A (at 25°C)

• RDS(on) (max): 120mΩ (at VGS = 10V)

• Gate Threshold Voltage (VGS(th)): 1V - 2.5V

• Operating Junction Temperature (Tj): -55°C to +150°C

• Gate Charge (Qg): 21nC (typical)

• Package Type: TO-252 (DPAK)

Applications of FQU13N10L N-Channel Enhancement Mode Power MOSFET

• DC-DC Converters

• Motor Drives

• Load Switches

• Telecommunications Equipment

• Automotive Systems

Package Includes

      1 x FQU13N10L N-Channel Enhancement Mode Power MOSFET