IRF640N N-Channel Power MOSFET
- Stock: Out Of Stock NotInStock
- SKU: 3100 | DAE820
54.16 (inc GST)
Rs.45.90 + GST
Quantity Pricing (inc GST)
5 + 49.80 25 + 45.78 50 + 42.13
GST Invoice on all Purchase. So you will be eligible to take input tax credit.
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IRF640 N Channel Power MOSFET
IRF640N N-Channel 200 volts, 18 Ampere Power MOSFET in TO220 PackageIRF640N is a Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package of IRF640N Power MOSFET is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.
If you are in Nasik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.
Features of IRF640N Power MOSFET
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Advanced Process Technology
Maximum Ratings of IRF640N Power MOSFET
- Drain Source Voltage : 200 Volts
- Continuous Drain Current : 18 Ampere
- Pulsed Drain Current 72 Ampere
1 x IRF640 N-Channel Power MOSFET
|Country of Origin||China|
|Imported By||ElectroSource Private Limited|