IRF640N N-Channel Power MOSFET
- Stock: 20
- SKU: 3100 | DAE820
-
Rs. 54.16 (inc GST)
Rs.45.90 + GSTQty :
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Quantity Pricing (inc GST)
5 + 49.80 25 + 45.78 50 + 42.13
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IRF640 N-Channel Power MOSFET
IRF640N Power MOSFET, 200V, 18A, efficient device for various applications.
The IRF640 N-Channel Power MOSFET is a reliable component designed for high-performance applications. It features a maximum drain-source voltage of 200 volts and a continuous drain current of 18 amperes. This MOSFET is known for its low on-resistance and fast switching capabilities, making it ideal for power management in various circuits. The TO-220 package ensures efficient thermal management, suitable for commercial and industrial uses.
Engineered by International Rectifier, the IRF640 is part of the advanced HEXFET® series, ensuring durability and high efficiency. Its rugged design and ease of paralleling make it a preferred choice for electronic designers. The IRF640 N-Channel Power MOSFET operates effectively at temperatures up to 175 °C, adding to its versatility in demanding environments.
Explore the benefits of using the IRF640 in your next project. Its features, including dynamic dV/dt rating and simple drive requirements, enhance its application in power supplies, motor drives, and other electronic circuits. This component is readily available through DNA, your trusted retailer for MOSFET & IGBT solutions in India.
Discover reliable solutions in the MOSFET & IGBT category at DNA. The IRF640 N-Channel Power MOSFET is a trusted choice for various applications. Check other MOSFET & IGBT that we have in stock.
At DNA, we cater to all your electronic component needs. If you’re looking for specific parts like SMPS, Development boards, or Analog ICs, reach out to us. We can import parts and support both retail and bulk orders. Contact Us.
Features of IRF640 N-Channel Power MOSFET
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Advanced Process Technology
Specification of IRF640 N-Channel Power MOSFET
- Drain Source Voltage: 200 Volts
- Continuous Drain Current: 18 Ampere
- Pulsed Drain Current: 72 Ampere
Applications of IRF640 N-Channel Power MOSFET
- Power management circuits
- Motor drives
- Switching power supplies
- Industrial automation systems
Related Links for IRF640 N-Channel Power MOSFET
Package Includes
- 1 X IRF640 N-Channel Power MOSFET
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