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IRF640N N-Channel Power MOSFET


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  • Stock: 20

    Availability: InStock priceValidUntil: 2026-06-28

  • SKU: 3100 | DAE820

Availability: InStock priceValidUntil: 2026-06-28

  • Rs. 54.16 (inc GST)
    Rs.45.90 + GST

    Qty :

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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IRF640 N-Channel Power MOSFET

IRF640N Power MOSFET, 200V, 18A, efficient device for various applications.

The IRF640 N-Channel Power MOSFET is a reliable component designed for high-performance applications. It features a maximum drain-source voltage of 200 volts and a continuous drain current of 18 amperes. This MOSFET is known for its low on-resistance and fast switching capabilities, making it ideal for power management in various circuits. The TO-220 package ensures efficient thermal management, suitable for commercial and industrial uses.

Engineered by International Rectifier, the IRF640 is part of the advanced HEXFET® series, ensuring durability and high efficiency. Its rugged design and ease of paralleling make it a preferred choice for electronic designers. The IRF640 N-Channel Power MOSFET operates effectively at temperatures up to 175 °C, adding to its versatility in demanding environments.

Explore the benefits of using the IRF640 in your next project. Its features, including dynamic dV/dt rating and simple drive requirements, enhance its application in power supplies, motor drives, and other electronic circuits. This component is readily available through DNA, your trusted retailer for MOSFET & IGBT solutions in India.

Discover reliable solutions in the MOSFET & IGBT category at DNA. The IRF640 N-Channel Power MOSFET is a trusted choice for various applications. Check other MOSFET & IGBT that we have in stock.

At DNA, we cater to all your electronic component needs. If you’re looking for specific parts like SMPS, Development boards, or Analog ICs, reach out to us. We can import parts and support both retail and bulk orders. Contact Us.

Features of IRF640 N-Channel Power MOSFET

  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • 175 °C Operating Temperature
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Advanced Process Technology

Specification of IRF640 N-Channel Power MOSFET

  • Drain Source Voltage: 200 Volts
  • Continuous Drain Current: 18 Ampere
  • Pulsed Drain Current: 72 Ampere

Applications of IRF640 N-Channel Power MOSFET

  • Power management circuits
  • Motor drives
  • Switching power supplies
  • Industrial automation systems

Related Links for IRF640 N-Channel Power MOSFET

    Package Includes

    • 1 X IRF640 N-Channel Power MOSFET
    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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