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K4H561638J-LCB3 ,256Mb, J-die DDR SDRAM, TSOP, 7.8us IC

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Stock: Out Of Stock
Availability: NotInStock priceValidUntil: 2026-12-13
SKU: 7096 | DAG977

Rs. 259.60 (inc GST)
Rs.220.00 + GST
Qty : Qty Qty

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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Import Service: We import a wide range of electronic components on request.

Description

Samsung 256Mb J-die DDR SDRAM Memory IC

K4H561638J-LCB3, 256Mb DDR SDRAM, 400Mb/s data rate, 66-TSOP package.

The Samsung 256Mb J-die DDR SDRAM Memory IC (K4H561638J-LCB3) is designed for high-performance applications. This memory IC operates at a data rate of 400Mb/s per pin, making it ideal for demanding memory systems. Its organization of 32M x 8 ensures efficient data handling, while the 2.5V voltage requirement provides stability across various applications.

Incorporating advanced CMOS technology, the Samsung 256Mb J-die DDR SDRAM Memory IC supports synchronous operations with data strobe features, enabling transactions on both edges of the DQS. This flexibility is crucial for high-speed operations in modern electronic devices, ensuring reliability and performance.

Applications for this memory IC range from consumer electronics to computing systems, where speed and efficiency are paramount. Explore the potential of the Samsung 256Mb J-die DDR SDRAM Memory IC for your project today.

Explore a wide range of quality Memory IC's from Samsung at DNA. Discover the best options for your electronic projects and ensure seamless performance. Check other Memory IC's that we have in stock.

If you're searching for specific electronic components, DNA is here to help. We can import parts if they're not in stock and support both retail and bulk orders. Consider checking out related items like Crystal, Analog IC, LCD, DC to DC Converter IC, and Connectors. Contact Us.

Features of Samsung 256Mb J-die DDR SDRAM Memory IC

256Mb density
DDR-400 data rate
66-TSOP package
Synchronous operation
Bidirectional data strobe support
Edge aligned data output

Specifications of Samsung 256Mb J-die DDR SDRAM Memory IC

Density: 256Mbit (32M x 8)
Package Type: 66-TSOP (II) with lead-free packaging
Voltage: 2.5V ± 0.2V
Interface: SSTL_2

Applications of Samsung 256Mb J-die DDR SDRAM Memory IC

Consumer electronics
Computing systems
High-performance memory applications
Data processing units

Package Includes

1 X Samsung 256Mb J-die DDR SDRAM Memory IC

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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