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K80E08K3 36V-80A High Power N-Channel MOSFET
- Stock: 50
- SKU: 6072 | DAG999
-
Rs. 62.30 (inc GST)
Rs.52.80 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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K80E08K3 36V-80A High Power N-Channel MOSFET
K80E08K3 36V-80A High Power N-Channel MOSFET
The K80E08K3 is an N-channel Power MOSFET designed for high-efficiency switching applications. This device is commonly used in power supplies, motor control, and other high-power circuits due to its excellent switching characteristics and low on-state resistance. N-Channel Power MOSFET 80V Drain-Source Voltage (Vds)High current handling capability, designed for demanding applications. Commonly available in a TO-220 package, suitable for through-hole mounting in power circuits.
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Features of K80E08K3 36V-80A High Power N-Channel MOSFET
- Low Rds(on): The K80E08K3 offers a low on-resistance, which minimizes power losses during operation, leading to greater efficiency in power circuits.
- High Current Capability: Designed to handle significant current, making it ideal for high-power applications such as motor drives and power supplies.
- Fast Switching Performance: Optimized for fast switching speeds, improving overall efficiency in switching applications like DC-DC converters.
- Avalanche Ruggedness: The MOSFET is built to withstand high-voltage spikes and can operate in harsh electrical environments.
- Thermal Performance: The package design and material help dissipate heat effectively, which allows the MOSFET to handle high power levels without thermal issues.
Specifications of K80E08K3 36V-80A High Power N-Channel MOSFET
- Vds (Drain-Source Voltage): 80V
- Id (Continuous Drain Current): Typically around 80-100A (depending on the specific model and conditions)
- Rds(on) (On-state Resistance): Low, typically in the milliohm range, ensuring minimal conduction losses
- Vgs (Gate-Source Voltage): ±20V
- Total Gate Charge (Qg): Low gate charge for efficient switching
- Power Dissipation (Pd): High power dissipation capability (typically in the hundreds of watts)
- Operating Temperature Range: -55°C to +175°C, ensuring reliable operation in various environments
- Vds (Drain-Source Voltage): 80V
- Id (Continuous Drain Current): Typically around 80-100A (depending on the specific model and conditions)
- Rds(on) (On-state Resistance): Low, typically in the milliohm range, ensuring minimal conduction losses
- Vgs (Gate-Source Voltage): ±20V
- Total Gate Charge (Qg): Low gate charge for efficient switching
- Power Dissipation (Pd): High power dissipation capability (typically in the hundreds of watts)
- Operating Temperature Range: -55°C to +175°C, ensuring reliable operation in various environments
Package Includes
- 1 x K80E08K3 36V-80A High Power N-Channel MOSFET
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