M27C256b-12F1 EEPROM MEMORY DIP IC
- Stock: 9
- SKU: 9127 | DAF682
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Rs. 191.16 (inc GST)
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STMicroelectronics M27C256b-12F1 EEPROM Memory DIP IC
M27C256b-12F1 EEPROM IC with 256 Kbit memory, 120 ns access time, UV erasable feature.
The STMicroelectronics M27C256b-12F1 EEPROM Memory DIP IC is a 256 Kbit, one-time programmable memory solution. It features a UV erasable function, making it suitable for applications needing permanent data storage. With an access time of 120 ns, this memory chip supports TTL levels and operates on a single +5V power supply. The M27C256b-12F1 is ideal for retro computing, embedded systems, and firmware storage in microcontroller-based designs.
This EEPROM IC is organized as 32,768 bytes, ensuring efficient data management in legacy hardware and arcade machines. The device is easy to program using standard EPROM programmers, and it can be erased by exposing it to UV light for 15–20 minutes under a UV lamp. Its robust endurance of over 100 cycles guarantees reliable performance for various applications.
Explore the versatility of the STMicroelectronics M27C256b-12F1 EEPROM Memory DIP IC in your projects. Whether you are working on game cartridge ROMs or control systems, this memory IC offers the reliability and efficiency you need for your electronic designs.
At DNA, we provide a wide range of Memory IC's including the STMicroelectronics M27C256b-12F1. Explore our collection to find the right components for your projects. Check other Memory IC's that we have in stock.
If you are seeking specific electronic components, reach out to us. We can import items not available in our stock and support both retail and bulk orders. Explore related products like Sensor Modules, Programmers, Development Modules, SMPS, IGBT, and Hongfa Relays. Contact Us.
Features of STMicroelectronics M27C256b-12F1 EEPROM Memory DIP IC
- 256 Kbit EEPROM Memory
- Access time: 120 ns
- UV-erasable via quartz window
- Data retention > 10 years
- Endurance > 100 erase/program cycles
- Compatible with TTL levels
- Single +5V power supply
- DIP-28 ceramic package with UV window
Specification of STMicroelectronics M27C256b-12F1 EEPROM Memory DIP IC
- Memory Organization: 32,768 x 8 bits
- Access Time: 120 ns
- Programming Voltage: 12.75V ± 0.25V
- Read Voltage: 5V ± 10%
- Erase Method: UV light
- Erase Time: 15–20 minutes under UV lamp
- Endurance: 100 cycles
- Package Type: DIP-28 ceramic with quartz window
Applications of STMicroelectronics M27C256b-12F1 EEPROM Memory DIP IC
- Firmware storage in microcontroller-based systems
- Retro computers and arcade machines
- Embedded systems with fixed data
- Game cartridge ROMs
Related Links for STMicroelectronics M27C256b-12F1 EEPROM Memory DIP IC
Package Includes
- 1 X STMicroelectronics M27C256b-12F1 EEPROM Memory DIP IC
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