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MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module
- Stock: Out Of Stock
- SKU: 8146 | DAH629
-
Rs. 2,334.06 (inc GST)
Rs.1,978.02 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module
MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module
The MG30G2CL3 is a high-power Darlington transistor module manufactured by Toshiba, specifically designed to cater to demanding applications requiring reliable power switching. It is a silicon-based NPN module that integrates multiple components, offering high performance and compact design, ideal for industrial and power electronics systems.
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Features of MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module
- Isolated Collector: The collector is electrically isolated from the case, enhancing safety and simplifying thermal management
- Integrated Components: Combines two power transistors and two freewheeling diodes in one package, reducing component count and assembly complexity
- High DC Current Gain: Ensures efficient amplification and switching performance
Specifications of MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module
- Collector-Emitter Voltage: 600 V
- Collector Current : 30 A
- Collector Power Dissipation: 250 W
- DC Current Gain: ≥100
- Collector Capacitance: 350 pF
- Maximum Junction Temperature: 150°C
- Package Type: X99
Applications of MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module
- Inverter Systems: Efficiently manages power conversion processes
- Servo Drives: Provides precise control in automation systems
- Industrial Motor Controls: Handles high-power requirements in industrial settings
Package Includes
1 x MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module
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