UTC 4N60L High Voltage Power MOSFET

UTC 4N60L High Voltage Power MOSFET

The UTC 4N60L High Voltage Power MOSFET is an N-channel enhancement-mode power MOSFET that can handle high voltage (up to 600V) and moderate current loads (up to 4A). It is designed to deliver reliable performance in both switching and linear applications. This device is built with advanced planar stripe technology to achieve low on-resistance, high switching speed, and robust avalanche characteristics.

DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.

• High Voltage Handling: Drain-Source Voltage (Vds) up to 600V

• Moderate Current Capacity: Continuous Drain Current (Id) up to 4A

• Low On-Resistance: Low Rds(on) for improved efficiency and reduced heat dissipation

• Fast Switching: High-speed switching capability minimizes power loss during operation

• Rugged Design: Built to withstand avalanche energy during transient conditions

Specifications of UTC 4N60L High Voltage Power MOSFET

• Maximum Drain-Source Voltage (Vds): 600V

• Maximum Gate-Source Voltage (Vgs): ±30V

• Continuous Drain Current (Id): 4A

• Pulsed Drain Current (Id,pulse): 16A

• Maximum Power (Pd): 100W (with proper heatsink)

• Resistance: 2.2 to 2.8Ω

• Package: TO-220

Applications of UTC 4N60L High Voltage Power MOSFET

• Switching Power Supplies

• LED Lighting Systems

• Motor Drives

• Inverter Circuits

• Consumer Electronics

• Industrial Systems

Package Includes

      1 x UTC 4N60L High Voltage Power MOSFET