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  • IRF830 N-Channel MOSFET (Doingter)

Product Images are shown for illustrative purposes only and may differ from actual product.

IRF830 N-Channel MOSFET (Doingter)

  • Stock: 39
  • Brand: Doingter
  • SKU: 2855 | DAE537
  • Rs. 26.08 (inc GST)
    Rs.22.10 + GST

    Qty :

  • Quantity Pricing (inc GST)

    10 + 23.95 25 + 22.07 50 + 20.30

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.

IRF830 N Channel Power MOSFET

IRF830 N-Channel Power MOSFET - 500 Volts, 4.5 Ampere in TO-220 Package; Doingter Make

IRF830 Power MOSFET from Doingter is a third generation Power MOSFETs that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package of IRF830 N-Channel Power MOSFET is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 Watt. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IRF830 Power MOSFET

  • Part Number: IRF830
  • MAKE: Doingter
  • Dynamic dv/dt Rating
  • Advanced Process Technology
  • Ultra Low ON-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 4.5 Ampere
  • ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 2.9 Ampere
  • IDM Pulsed Drain Current 18 Ampere
  • PD @TC = 25°C Power Dissipation 74 Watt
  • Linear Derating Factor 0.59 W/°C
  • VGS Gate-to-Source Voltage ± 20 V

Package Includes

1 x IRF830 N-Channel Power MOSFET

Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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