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FTD01N IGBT (Insulated Gate Bipolar Transistor) TO‑220F Package
- Stock: 25
- SKU: 10013 | DAJ003
-
Rs. 265.50 (inc GST)
Rs.225.00 + GSTQty :
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FTD01N IGBT (Insulated Gate Bipolar Transistor) TO‑220F Package
FTD01N: High‑Voltage IGBT for Motor & Power Supply Control in Printer Applications
The FTD01N is a high‑voltage IGBT designed for robust switching control in printer power and motor driver circuits. Commonly used in tandem with FTD02P, the FTD01N offers 600 V blocking capability with low gate charge (~4.8 nC) and fast switching response, while being fully avalanche tested for reliable long-term performance. Packaged in a TO‑220F format, it ensures effective thermal management and ease of installation.
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Features of FTD01N IGBT
- High-voltage IGBT combining MOSFET switching speed and BJT current capacity
- Repetitive peak voltage rating of 600 V
- Low gate charge (~4.8 nC typical)
- Fast switching performance for power electronics
- 100% avalanche tested for reliability
- TO-220F package for thermal and mounting convenience
Specifications of FTD01N IGBT
- Device Type: IGBT (Insulated Gate Bipolar Transistor)
- Repetitive Peak Blocking Voltage (VCEX): 600 V
- Gate Charge (Qg): ~4.8 nC (typical)
- Built-in Avalanche Capability
- Package: TO‑220F
Applications of FTD01N IGBT
- Motor and power control in Epson printers
- H‑bridge circuits for direction control
- Switching regulators and power supply interfaces
- Compact printing and embedded control systems
Related Links
Package Include
- 1 × FTD01N IGBT (TO‑220F)
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