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FTD01N IGBT (Insulated Gate Bipolar Transistor) TO‑220F Package

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Stock: 15
Availability: InStock priceValidUntil: 2026-03-15
SKU: 10013 | DAJ003

Rs. 265.50 (inc GST)
Rs.225.00 + GST

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GST Invoice: Available for all purchases — eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need more quantity or not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

FTD01N IGBT Insulated Gate Bipolar Transistor

FTD01N IGBT for motor & power control, 600V rating, low gate charge ~4.8nC.

The FTD01N IGBT Insulated Gate Bipolar Transistor is engineered for high-voltage applications, particularly in motor and power supply control systems. With a blocking voltage of 600V and a low gate charge of approximately 4.8nC, this transistor delivers efficient performance in printer circuits. Its fast switching response makes it suitable for demanding electronic environments.

Designed with a TO-220F package, the FTD01N IGBT ensures effective thermal management and easy installation. It is fully avalanche tested, providing reliable long-term operation in various applications. This transistor is ideal for H-bridge circuits and switching regulators, making it a versatile choice for electronic projects.

In the Indian market, the FTD01N IGBT stands out for its robust construction and performance. It is commonly used in compact printing systems and embedded control applications. Explore how this component can enhance your electronic designs today.

Discover high-quality MOSFET & IGBT solutions from leading manufacturers at DNA. The FTD01N IGBT is perfect for your power control needs. Check other "MOSFET & IGBT" that we have in stock.

At DNA, we cater to the needs of Indian electronics buyers. If you can't find specific components, we can help you source them or even import them if necessary. We support both retail and bulk purchases. Explore related items like Capacitors, Sensor Modules, and Digital ICs. Contact Us.

Features of FTD01N IGBT

High-voltage IGBT with fast switching speed
Repetitive peak voltage rating of 600V
Low gate charge ~4.8nC
100% avalanche tested for reliability
TO-220F package for thermal convenience

Specification of FTD01N IGBT

Device Type: IGBT
Repetitive Peak Blocking Voltage (VCEX): 600V
Gate Charge (Qg): ~4.8nC
Package: TO-220F

Applications of FTD01N IGBT

Motor control in printers
H-bridge circuits
Switching regulators
Power supply interfaces
Embedded control systems

Package Includes

1 X FTD01N IGBT

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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Yes we provide GST Bill by the name of DNA Solutions. You will receive a GST compliant invoice for your records. You can take GST benefit.

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We aim to supply genuine, new parts. For sourced items, we confirm availability and provide the best matching grade/brand possible.

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FTD01N IGBT (Insulated Gate Bipolar Transistor) TO‑220F Package

Qty :

FTD01N IGBT Insulated Gate Bipolar Transistor

FTD01N IGBT for motor & power control, 600V rating, low gate charge ~4.8nC.

In the Indian market, the FTD01N IGBT stands out for its robust construction and performance. It is commonly used in compact printing systems and embedded control applications. Explore how this component can enhance your electronic designs today.

Discover high-quality MOSFET & IGBT solutions from leading manufacturers at DNA. The FTD01N IGBT is perfect for your power control needs. Check other "MOSFET & IGBT" that we have in stock.

At DNA, we cater to the needs of Indian electronics buyers. If you can't find specific components, we can help you source them or even import them if necessary. We support both retail and bulk purchases. Explore related items like Capacitors, Sensor Modules, and Digital ICs. Contact Us.

Features of FTD01N IGBT

Specification of FTD01N IGBT

Applications of FTD01N IGBT

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Package Includes

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