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FTD01N IGBT (Insulated Gate Bipolar Transistor) TO‑220F Package
- Stock: 15
- SKU: 10013 | DAJ003
-
Rs. 265.50 (inc GST)
Rs.225.00 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com
Import Service: We import a wide range of electronic components on request.
FTD01N IGBT Insulated Gate Bipolar Transistor
FTD01N IGBT for motor & power control, 600V rating, low gate charge ~4.8nC.
The FTD01N IGBT Insulated Gate Bipolar Transistor is engineered for high-voltage applications, particularly in motor and power supply control systems. With a blocking voltage of 600V and a low gate charge of approximately 4.8nC, this transistor delivers efficient performance in printer circuits. Its fast switching response makes it suitable for demanding electronic environments.
Designed with a TO-220F package, the FTD01N IGBT ensures effective thermal management and easy installation. It is fully avalanche tested, providing reliable long-term operation in various applications. This transistor is ideal for H-bridge circuits and switching regulators, making it a versatile choice for electronic projects.
In the Indian market, the FTD01N IGBT stands out for its robust construction and performance. It is commonly used in compact printing systems and embedded control applications. Explore how this component can enhance your electronic designs today.
Discover high-quality MOSFET & IGBT solutions from leading manufacturers at DNA. The FTD01N IGBT is perfect for your power control needs. Check other "MOSFET & IGBT" that we have in stock.
At DNA, we cater to the needs of Indian electronics buyers. If you can't find specific components, we can help you source them or even import them if necessary. We support both retail and bulk purchases. Explore related items like Capacitors, Sensor Modules, and Digital ICs. Contact Us.
Features of FTD01N IGBT
- High-voltage IGBT with fast switching speed
- Repetitive peak voltage rating of 600V
- Low gate charge ~4.8nC
- 100% avalanche tested for reliability
- TO-220F package for thermal convenience
Specification of FTD01N IGBT
- Device Type: IGBT
- Repetitive Peak Blocking Voltage (VCEX): 600V
- Gate Charge (Qg): ~4.8nC
- Package: TO-220F
Applications of FTD01N IGBT
- Motor control in printers
- H-bridge circuits
- Switching regulators
- Power supply interfaces
- Embedded control systems
Related Links for FTD01N IGBT Insulated Gate Bipolar Transistor
Package Includes
- 1 X FTD01N IGBT
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