FTD01N IGBT (Insulated Gate Bipolar Transistor) TO‑220F Package

FTD01N: High‑Voltage IGBT for Motor & Power Supply Control in Printer Applications

The FTD01N is a high‑voltage IGBT designed for robust switching control in printer power and motor driver circuits. Commonly used in tandem with FTD02P, the FTD01N offers 600 V blocking capability with low gate charge (~4.8 nC) and fast switching response, while being fully avalanche tested for reliable long-term performance. Packaged in a TO‑220F format, it ensures effective thermal management and ease of installation.

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Features of FTD01N IGBT

• High-voltage IGBT combining MOSFET switching speed and BJT current capacity
• Repetitive peak voltage rating of 600 V
• Low gate charge (~4.8 nC typical)
• Fast switching performance for power electronics
• 100% avalanche tested for reliability
• TO-220F package for thermal and mounting convenience

Specifications of FTD01N IGBT

• Device Type: IGBT (Insulated Gate Bipolar Transistor)
• Repetitive Peak Blocking Voltage (V_CEX): 600 V
• Gate Charge (Q_g): ~4.8 nC (typical)
• Built-in Avalanche Capability
• Package: TO‑220F

Applications of FTD01N IGBT

• Motor and power control in Epson printers
• H‑bridge circuits for direction control
• Switching regulators and power supply interfaces
• Compact printing and embedded control systems

Related Links

• FTD01N Datasheet (PDF)
• Browse More MOSFETs & IGBTs

Package Include

• 1 × FTD01N IGBT (TO‑220F)