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IRF510 N-Channel Power MOSFET
- Stock: 16
- SKU: 538 | DAA167
-
Rs. 64.19 (inc GST)
Rs.54.40 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com
Import Service: We import a wide range of electronic components on request.
IRF510 N Channel Power MOSFET
IRF510 N Channel 100 volts, 5.6 Ampere Power MOSFET in TO220 Package
IRF510 Power MOSFET is a third generation MOSFET that provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.
IRF510 N Channel Power MOSFET comes in TO220 package. The TO-220AB package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 Watt. The low thermal resistanceand low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.
If you are in Nasik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Features of IRF510 Power MOSFET
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175 °C operating temperature
- Fast switching
- Ease of paralleling
- Simple drive requirements
Ratings of IRF510 N-Channel Power MOSFET
- Drain-Source Voltage (VDS): 100 Volts
- Gate-Source Voltage (VGS): ± 20 Volts
- Continuous Drain Current (VGS at 10 V TC = 25 °C): 5.6 Ampere
- Continuous Drain Current (VGS at 10 V TC = 100 °C): 4.0 Ampere
- Pulsed Drain Current (IDM): 20 Ampere
- Maximum Power Dissipation TC = 43 Watt
- Peak Diode Recovery dV/dt c dV/dt 5.5 V/ns
- Operating Junction and Storage Temperature Range: -55 to +175
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