IRF510 N Channel Power MOSFET

IRF510 N Channel 100 volts, 5.6 Ampere Power MOSFET in TO220 Package

IRF510 Power MOSFET is a third generation MOSFET that provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. 

IRF510 N Channel Power MOSFET comes in TO220 package. The TO-220AB package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 Watt. The low thermal resistanceand low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

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Features of IRF510 Power MOSFET

• Dynamic dV/dt rating

• Repetitive avalanche rated

• 175 °C operating temperature

• Fast switching

• Ease of paralleling

• Simple drive requirements

Ratings of IRF510 N-Channel Power MOSFET

• Drain-Source Voltage (VDS): 100 Volts

• Gate-Source Voltage (VGS): ± 20 Volts

• Continuous Drain Current (VGS at 10 V TC = 25 °C): 5.6 Ampere

• Continuous Drain Current (VGS at 10 V TC = 100 °C): 4.0 Ampere

• Pulsed Drain Current (IDM): 20 Ampere

• Maximum Power Dissipation TC = 43 Watt

• Peak Diode Recovery dV/dt c dV/dt 5.5 V/ns

• Operating Junction and Storage Temperature Range: -55 to +175 

Related Links

• IRF510 N Channel Power Mosfet Datasheet.