SI2336DS T1 GE3 SMD MOSFET

SI2336DS T1 GE3 SMD MOSFET

This is N-channel 30V (D-S) TrenchFET® power MOSFET. Used in DC/DC converters, boost converters.

DNA solutions, Nashik has various types of Power MOSFET's. Check out our complete collection of  Power MOSFET's.

• TrenchFET® Power MOSFET

• 100 % Rg Tested

• Material categorization:

• For definitions of compliance please see

Applications

• Boost Converters
• DC/DC Converters

Specifications

• Product Category: MOSFET

• RoHS :Details

• Technology: Si

• Vds - Drain-Source Breakdown Voltage:30 V

• Id - Continuous Drain Current:5.2 A

• Rds On - Drain-Source Resistance:42 mOhms

• Mounting Style:SMD/SMT

• Package/Case:SOT-23-3

• Transistor Polarity: N-Channel

• Number of Channels:1 Channel

• Vgs - Gate-Source Voltage: - 8 V, + 8 V

• Vgs th - Gate-Source Threshold Voltage:1 V

• Qg - Gate Charge:10 nC

• Minimum Operating Temperature: - 55 C

• Maximum Operating Temperature: + 150 C

• Pd - Power Dissipation:1.8 W

• Channel Mode:Enhancement

• Tradename: TrenchFET

• Series:SI2

• Packaging: Reel

• Packaging :Cut Tape

• Packaging: Mouse Reel

• Configuration: Single

• Fall Time:10 ns

• Height:1.45 mm

• Length:2.9 mm

• Product Type: MOSFET

• Rise Time:10 ns

• Subcategory: MOSFETs

• Transistor Type:1 N-Channel

• Typical Turn-Off Delay Time:20 ns

• Typical Turn-On Delay Time:6 ns

• Width:1.6 mm

• Part # Aliases:SI2336DS-T1-BE3 SI2336DS-GE3

• Unit Weight:8 mg

Related link

SI2336DS-T1-GE3 SMD MOSFET DATASHEET

Package Includes

1 x SI2336DS T1 GE3 SMD MOSFET