SI2336DS T1 GE3 SMD MOSFET
- Stock: 30 InStock
- SKU: 3721 | DAF105
-
Rs.
31.86 (inc GST)
Rs.27.00 + GSTQty :
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SI2336DS T1 GE3 SMD MOSFET
SI2336DS T1 GE3 SMD MOSFET
This is N-channel 30V (D-S) TrenchFET® power MOSFET. Used in DC/DC converters, boost converters.
DNA solutions, Nashik has various types of Power MOSFET's. Check out our complete collection of Power MOSFET's.
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- Material categorization:
- For definitions of compliance please see
Applications
- Boost Converters
- DC/DC Converters
Specifications
- Product Category: MOSFET
- RoHS :Details
- Technology: Si
- Vds - Drain-Source Breakdown Voltage:30 V
- Id - Continuous Drain Current:5.2 A
- Rds On - Drain-Source Resistance:42 mOhms
- Mounting Style:SMD/SMT
- Package/Case:SOT-23-3
- Transistor Polarity: N-Channel
- Number of Channels:1 Channel
- Vgs - Gate-Source Voltage: - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage:1 V
- Qg - Gate Charge:10 nC
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Pd - Power Dissipation:1.8 W
- Channel Mode:Enhancement
- Tradename: TrenchFET
- Series:SI2
- Packaging: Reel
- Packaging :Cut Tape
- Packaging: Mouse Reel
- Configuration: Single
- Fall Time:10 ns
- Height:1.45 mm
- Length:2.9 mm
- Product Type: MOSFET
- Rise Time:10 ns
- Subcategory: MOSFETs
- Transistor Type:1 N-Channel
- Typical Turn-Off Delay Time:20 ns
- Typical Turn-On Delay Time:6 ns
- Width:1.6 mm
- Part # Aliases:SI2336DS-T1-BE3 SI2336DS-GE3
- Unit Weight:8 mg
Related link
SI2336DS-T1-GE3 SMD MOSFET DATASHEET
Package Includes
1 x SI2336DS T1 GE3 SMD MOSFET
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