SI4942DY Dual N-Channel 40-V (D-S) MOSFET(SO-8) IC
- Stock: Out Of Stock
- SKU: 5067 | DAG832
-
Rs. 108.96 (inc GST)
Rs.92.34 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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SI4942DY Dual N-Channel MOSFET
SI4942DY Dual N-Channel MOSFET with low on-resistance, high-speed switching, and 30A pulsed drain current capacity.
The SI4942DY Dual N-Channel MOSFET is engineered for high-efficiency power management applications. It operates efficiently with a maximum drain-source voltage of 30V and delivers a pulsed drain current of up to 30A. This component is ideal for both low-voltage and high-current loads, making it versatile for various electronic circuits. With its logic-level gate drive, it can be directly controlled by microcontrollers, simplifying integration into your designs.
The SI4942DY Dual N-Channel MOSFET features low on-resistance, ensuring minimal power loss and improved overall efficiency. Its compact SO-8 package allows for easy surface mounting on printed circuit boards, making it a preferred choice for developers looking to save space while maintaining performance. The high-speed switching capability of this MOSFET enhances the efficiency of power conversion processes.
For Indian customers, the SI4942DY Dual N-Channel MOSFET provides a reliable solution for power electronics. Its combination of robust specifications and ease of use makes it suitable for a wide range of applications including power management and conversion. Explore this product to enhance your electronic projects.
Explore high-quality MOSFET & IGBT solutions at DNA. The Brand offers reliable components for your projects. Check other "MOSFET & IGBT" that we have in stock.
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Features of SI4942DY Dual N-Channel MOSFET
- Dual N-channel design
- Low on-resistance
- Logic-level gate drive
- High-speed switching
- Compact SO-8 package
Specification of SI4942DY Dual N-Channel MOSFET
- Drain-Source Voltage (V_DS): 30V (maximum)
- Gate-Source Voltage (V_GS): ±20V
- Pulsed Drain Current (I_DM): 30A (maximum)
- Total Gate Charge (Q_g): 17 nC (typical)
- Turn-On Delay Time (t_d(on)): 9ns (typical)
- Turn-Off Delay Time (t_d(off)): 24ns (typical)
Applications of SI4942DY Dual N-Channel MOSFET
- Power management circuits
- DC-DC converters
- Motor drivers
- High-efficiency power supplies
- Switching regulators
Package Includes
- 1 X SI4942DY Dual N-Channel MOSFET
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