SI4942DY Dual N-Channel 40-V (D-S) MOSFET(SO-8) IC
- Stock: Out Of Stock
- SKU: 5067 | DAG832
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Rs. 108.96 (inc GST)
Rs.92.34 + GSTQty :
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SI4942DY Dual N-Channel MOSFET
SI4942DY Dual N-Channel MOSFET with low on-resistance, high-speed switching, and 30A pulsed drain current capacity.
The SI4942DY Dual N-Channel MOSFET is engineered for high-efficiency power management applications. It operates efficiently with a maximum drain-source voltage of 30V and delivers a pulsed drain current of up to 30A. This component is ideal for both low-voltage and high-current loads, making it versatile for various electronic circuits. With its logic-level gate drive, it can be directly controlled by microcontrollers, simplifying integration into your designs.
The SI4942DY Dual N-Channel MOSFET features low on-resistance, ensuring minimal power loss and improved overall efficiency. Its compact SO-8 package allows for easy surface mounting on printed circuit boards, making it a preferred choice for developers looking to save space while maintaining performance. The high-speed switching capability of this MOSFET enhances the efficiency of power conversion processes.
For Indian customers, the SI4942DY Dual N-Channel MOSFET provides a reliable solution for power electronics. Its combination of robust specifications and ease of use makes it suitable for a wide range of applications including power management and conversion. Explore this product to enhance your electronic projects.
Explore high-quality MOSFET & IGBT solutions at DNA. The Brand offers reliable components for your projects. Check other "MOSFET & IGBT" that we have in stock.
If you need more electronic components, reach out to us at DNA. We support retail and bulk orders. We can also import parts if they are not available. Check out related items like Transistors, Nextion Displays, Sensors, Programmers, Connectors, and Hongfa Relays. Contact Us.
Features of SI4942DY Dual N-Channel MOSFET
- Dual N-channel design
- Low on-resistance
- Logic-level gate drive
- High-speed switching
- Compact SO-8 package
Specification of SI4942DY Dual N-Channel MOSFET
- Drain-Source Voltage (V_DS): 30V (maximum)
- Gate-Source Voltage (V_GS): ±20V
- Pulsed Drain Current (I_DM): 30A (maximum)
- Total Gate Charge (Q_g): 17 nC (typical)
- Turn-On Delay Time (t_d(on)): 9ns (typical)
- Turn-Off Delay Time (t_d(off)): 24ns (typical)
Applications of SI4942DY Dual N-Channel MOSFET
- Power management circuits
- DC-DC converters
- Motor drivers
- High-efficiency power supplies
- Switching regulators
Package Includes
- 1 X SI4942DY Dual N-Channel MOSFET
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