• SI4942DY Dual N-Channel 40-V (D-S) MOSFET(SO-8) IC

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SI4942DY Dual N-Channel 40-V (D-S) MOSFET(SO-8) IC

  • Stock: Out Of Stock
  • SKU: 5067 | DAG832

Availability: NotInStock priceValidUntil: 2025-10-01

  • Rs. 108.96 (inc GST)
    Rs.92.34 + GST

    Qty :

GST Invoice: Available for all purchases — eligible for input tax credit.

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SI4942DY Dual N-Channel 40-V (D-S) MOSFET(SO-8) IC

SI4942DY Dual N-Channel 40-V (D-S) MOSFET(SO-8) IC

The SI4942DY is a dual N-channel MOSFET that features low on-resistance, high-speed switching, and high-current capability, making it ideal for high-efficiency power conversion and management applications. It can handle both low-voltage and high-current loads, making it versatile for a range of power electronics circuits. The MOSFET operates with logic-level gate drive, meaning it can be directly driven by typical microcontroller or logic circuits.

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Features of SI4942DY Dual N-Channel 40-V (D-S) MOSFET(SO-8) IC

  • Dual N-channel MOSFET: Two MOSFETs in a single package, allowing for more compact designs.
  • Low on-resistance: Ensures minimal power loss during operation, improving efficiency.
  • Logic-level gate drive: Can be driven directly by 3.3V or 5V logic, simplifying control.
  • High-speed switching: Enables efficient switching in power management and conversion applications.
  • Compact SO-8 package: Space-efficient design, suitable for surface mounting on printed circuit boards.

Specifications of SI4942DY Dual N-Channel 40-V (D-S) MOSFET(SO-8) IC

  • Drain-Source Voltage (V_DS): 30V (maximum).
  • Gate-Source Voltage (V_GS): ±20V.
  • Pulsed Drain Current (I_DM): 30A (maximum).
  • Total Gate Charge (Q_g): 17 nC (typical).
  • Turn-On Delay Time (t_d(on)): 9ns (typical).
  • Turn-Off Delay Time (t_d(off)): 24ns (typical).

    Package Includes

    • 1 x SI4942DY Dual N-Channel 40-V (D-S) MOSFET(SO-8) IC

    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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