2SK3565 N‑Channel MOSFET TO‑220 Package

2SK3565: High‑Voltage N‑Channel MOSFET for Switching Regulators and Power Applications

The 2SK3565 is a high‑voltage N‑channel MOSFET designed primarily for switching voltage regulator applications. Rated at a drain‑source breakdown voltage of 900 V and continuous drain current of 5 A, it offers reliable performance for demanding power circuits. With a maximum on‑resistance (R_DS(on)) of approximately 2.5 Ω (at V_GS = 10 V, I_D = 3 A), and housed in a TO‑220 (TO‑220SIS/TO‑220FP) through‑hole package, this MOSFET blends robust capability with efficient thermal behavior. Additionally, it features fast switching characteristics, including rise/fall times around 30–60 ns.

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Features of 2SK3565 MOSFET

• High‑voltage enhancement‑mode N‑channel MOSFET
• Drain‑source voltage rating: 900 V
• Continuous drain current: 5 A
• R_DS(on) ≤ 2.5 Ω at V_GS = 10 V, I_D = 3 A
• Fast switching: rise time ~30 ns, fall time ~60 ns
• TO‑220 through‑hole package for easy soldering and heat sinking
• High total gate charge: ~28 nC at V_GS = 10 V

Specifications of 2SK3565 MOSFET

• Transistor Type: N‑Channel MOSFET
• Drain‑Source Breakdown Voltage (V_DSS): 900 V
• Gate‑Source Voltage (V_GSS): ±30 V
• Continuous Drain Current (I_D): 5 A
• Maximum R_DS(on): ~2.5 Ω @ V_GS=10 V, I_D=3 A
• Gate Threshold Voltage (V_th): 2.0–4.0 V (typical at V_DS=10 V, I_D=1 mA)
• Total Gate Charge (Q_g): ~28 nC @ V_GS=10 V
• Input Capacitance (C_iss): ~1,150 pF
• Rise Time (t_r): ~30 ns; Fall Time (t_f): ~60 ns
• Power Dissipation (P_D): 45 W (at case temperature = 25 °C)
• Maximum Junction Temperature (T_J): 150 °C
• Package: TO‑220SIS / TO‑220FP (3‑lead through‑hole)

Applications of 2SK3565 MOSFET

• Switching voltage regulators and converters
• High‑voltage power supplies and inverters
• Industrial power switching circuits
• High‑speed switching applications

Related Links

• 2SK3565 Datasheet (PDF)
• Browse More Transistors & Diodes

Package Include

• 1 x 2SK3565 N‑Channel MOSFET (TO‑220)