MOSFET 2SK3565 N‑Channel High-Voltage TO‑220

MOSFET 2SK3565 N‑Channel High-Voltage TO‑220

2SK3565 N-Channel MOSFET for high-voltage applications with 900V rating, 5A current, and low on-resistance.

The 2SK3565 N‑Channel MOSFET is engineered for high-voltage applications, ideal for switching voltage regulators and power supplies. With a breakdown voltage of 900V and a continuous drain current of 5A, it ensures reliable performance in demanding environments. Its low on-resistance of approximately 2.5Ω at VGS=10V and ID=3A enhances efficiency and thermal management, making it suitable for various industrial applications.

Designed in a TO‑220 package, the 2SK3565 N‑Channel MOSFET offers straightforward soldering and effective heat dissipation. Fast switching characteristics, including rise and fall times of approximately 30ns and 60ns, provide versatility for high-speed switching applications. This MOSFET is a trusted choice for engineers needing robust solutions for high-voltage power circuits.

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Features of 2SK3565 MOSFET

• High-voltage enhancement-mode N-channel MOSFET
• Drain-source voltage rating: 900 V
• Continuous drain current: 5 A
• RDS(on) ≤ 2.5 Ω at VGS = 10 V, ID = 3 A
• Fast switching: rise time ~30 ns, fall time ~60 ns
• TO‑220 through-hole package for easy soldering
• High total gate charge: ~28 nC at VGS = 10 V

Specification of 2SK3565 MOSFET

• Transistor Type: N‑Channel MOSFET
• Drain‑Source Breakdown Voltage (VDSS): 900 V
• Gate‑Source Voltage (VGSS): ±30 V
• Continuous Drain Current (ID): 5 A
• Maximum RDS(on): ~2.5 Ω @ VGS=10 V, ID=3 A
• Gate Threshold Voltage (Vth): 2.0–4.0 V
• Total Gate Charge (Qg): ~28 nC @ VGS=10 V
• Input Capacitance (Ciss): ~1,150 pF
• Power Dissipation (PD): 45 W

Applications of 2SK3565 MOSFET

• Switching voltage regulators and converters
• High-voltage power supplies and inverters
• Industrial power switching circuits
• High-speed switching applications

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Package Includes

• 1 X 2SK3565 N‑Channel MOSFET (TO‑220)