2N7002 N-Channel Trench MOSFET for Power Management

2N7002 N-Channel MOSFET with Low On-Resistance, Fast Switching Speed, and Low Input Capacitance.

The 2N7002 N-Channel Trench MOSFET is designed to reduce on-state resistance while ensuring excellent switching performance. This makes it a perfect choice for high efficiency power management applications. With features like low gate threshold voltage and fast switching speed, the 2N7002 supports logic level gate drive sources effectively. Its small surface mount package fits well in compact designs, making it versatile for various electronic projects.

The 2N7002 N-Channel Trench MOSFET is suitable for applications such as logic level translators and high-speed line drivers. Its trench technology enhances efficiency, allowing for minimal heat generation during operations. This MOSFET is ideal for both hobbyists and professionals looking for reliable components to optimize their electronic circuits.

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Features of 2N7002 N-Channel Trench MOSFET

• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package

Specification of 2N7002 N-Channel Trench MOSFET

• RDS(ON): 0.6 Ohm
• VGS(th): 2-4V
• Maximum VDS: 60V

Applications of 2N7002 N-Channel Trench MOSFET

• Logic level translators
• High-speed line drivers

Related Links for 2N7002 N-Channel Trench MOSFET for Power Management

2N7002 Datasheet:

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X 2N7002 N-Channel Trench MOSFET