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2SK3699 N-Channel Power MOSFET for Efficient Switching

  • Stock: 30

    Availability: InStock priceValidUntil: 2026-02-02

  • SKU: 9998 | DAI988

Availability: InStock priceValidUntil: 2026-02-02

  • Rs. 103.25 (inc GST)
    Rs.87.50 + GST

    Qty :

GST Invoice: Available for all purchases — eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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2SK3699 N-Channel Power MOSFET for Efficient Switching

2SK3699: N-Channel MOSFET with 900V voltage, 8A current, and low on-resistance for power applications.

The 2SK3699 N-Channel Power MOSFET is designed for high-voltage switching applications, ideal for power supplies and motor control. With a drain-source voltage of 900V and a continuous drain current of 8A, it delivers efficient performance with low on-resistance. The TO-3P package ensures optimal heat dissipation, making it suitable for demanding applications.

This robust MOSFET features fast switching capabilities, enhancing power conversion efficiency. Its specifications include an on-resistance of 0.85Ω and a total gate charge of 63nC, which contribute to its reliability in inverter circuits. The 2SK3699 is perfect for switch-mode power supplies, ensuring high performance in various electronic projects.

Choose the 2SK3699 N-Channel Power MOSFET for its durability and efficiency. This component is an excellent choice for those engaged in high-voltage, high-current applications. Explore its potential in your designs today.

Explore reliable solutions in the MOSFET & IGBT category at DNA. The 2SK3699 N-Channel Power MOSFET by our trusted Manufacturer ensures high-performance switching. Check other MOSFET & IGBT that we have in stock.

At DNA, we cater to all your electronic component needs. If you can't find specific parts, reach out to us. We can import items and support both retail and bulk purchases. Explore related products like Programmer, SMPS, Nextion Display, Digital IC, Diode, and LCD. Contact Us.

Features of 2SK3699 N-Channel Power MOSFET

  • High drain-source voltage: 900V
  • Continuous drain current: 8A
  • Low RDS(on): 0.85Ω
  • Fast switching performance
  • TO-3P package for thermal performance

Specifications of 2SK3699 N-Channel Power MOSFET

  • Transistor Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 900V
  • Gate-Source Voltage (VGSS): ±30V
  • Continuous Drain Current (ID): 8A
  • Pulsed Drain Current (ID(pulse)): 32A
  • On-Resistance (RDS(on)): 0.85Ω
  • Total Gate Charge (Qg): 63nC
  • Input Capacitance (Ciss): 2100pF
  • Power Dissipation (PD): 80W

Applications of 2SK3699 N-Channel Power MOSFET

  • Switch-mode power supplies (SMPS)
  • Motor control and industrial drives
  • Inverter and converter circuits
  • High-voltage, high-current switching

Related Links for 2SK3699 N-Channel Power MOSFET for Efficient Switching

Package Includes

  • 1 X 2SK3699 N-Channel Power MOSFET (TO-3P)
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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