2SK3699 N-Channel Power MOSFET TO-3P Package

2SK3699: High-Voltage N-Channel MOSFET for Power Switching Applications

The 2SK3699 MOSFET is a high-voltage, N-Channel silicon power MOSFET designed for efficient switching in power supplies, motor control, and inverter circuits. With a drain-source voltage rating of 900 V and a continuous drain current of 8 A, the 2SK3699 delivers low on-resistance and high-speed switching performance. The robust TO-3P package ensures excellent heat dissipation for demanding power applications.

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Features of 2SK3699 MOSFET

• N-Channel silicon power MOSFET
• High drain-source voltage: 900 V
• Continuous drain current: 8 A
• Low R_DS(on): 0.85 Ω type (V_GS=10 V, I_D=4 A)
• Fast switching performance for efficient power conversion
• High avalanche energy capability
• TO-3P package for excellent thermal performance

Specifications of 2SK3699 MOSFET

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 900 V
• Gate-Source Voltage (V_GSS): ±30 V
• Continuous Drain Current (I_D): 8 A
• Pulsed Drain Current (I_D(pulse)): 32 A
• On-Resistance (R_DS(on)): 0.85 Ω typ
• Total Gate Charge (Q_g): 63 nC (typ.)
• Input Capacitance (C_iss): 2100 pF
• Reverse Recovery Time (t_rr): 480 ns
• Power Dissipation (P_D): 80 W
• Operating Junction Temperature (T_j): 150 °C
• Package: TO-3P

Applications of 2SK3699 MOSFET

• Switch-mode power supplies (SMPS)
• Motor control and industrial drives
• Inverter and converter circuits
• High-voltage, high-current switching

Related Links

• 2SK3699 Datasheet (PDF)
• Browse More MOSFETs & IGBTs

Package Include

• 1 x 2SK3699 N-Channel Power MOSFET (TO-3P)