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K4H561638J-LCB3 ,256Mb, J-die DDR SDRAM, TSOP, 7.8us IC


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  • Stock: Out Of Stock

    Availability: NotInStock priceValidUntil: 2026-04-29

  • SKU: 7096 | DAG977

Availability: NotInStock priceValidUntil: 2026-04-29

  • Rs. 259.60 (inc GST)
    Rs.220.00 + GST

    Qty :

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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Import Service: We import a wide range of electronic components on request.

Samsung 256Mb J-die DDR SDRAM Memory IC

K4H561638J-LCB3, 256Mb DDR SDRAM, 400Mb/s data rate, 66-TSOP package.

The Samsung 256Mb J-die DDR SDRAM Memory IC (K4H561638J-LCB3) is designed for high-performance applications. This memory IC operates at a data rate of 400Mb/s per pin, making it ideal for demanding memory systems. Its organization of 32M x 8 ensures efficient data handling, while the 2.5V voltage requirement provides stability across various applications.

Incorporating advanced CMOS technology, the Samsung 256Mb J-die DDR SDRAM Memory IC supports synchronous operations with data strobe features, enabling transactions on both edges of the DQS. This flexibility is crucial for high-speed operations in modern electronic devices, ensuring reliability and performance.

Applications for this memory IC range from consumer electronics to computing systems, where speed and efficiency are paramount. Explore the potential of the Samsung 256Mb J-die DDR SDRAM Memory IC for your project today.

Explore a wide range of quality Memory IC's from Samsung at DNA. Discover the best options for your electronic projects and ensure seamless performance. Check other Memory IC's that we have in stock.

If you're searching for specific electronic components, DNA is here to help. We can import parts if they're not in stock and support both retail and bulk orders. Consider checking out related items like Crystal, Analog IC, LCD, DC to DC Converter IC, and Connectors. Contact Us.

Features of Samsung 256Mb J-die DDR SDRAM Memory IC

  • 256Mb density
  • DDR-400 data rate
  • 66-TSOP package
  • Synchronous operation
  • Bidirectional data strobe support
  • Edge aligned data output

Specifications of Samsung 256Mb J-die DDR SDRAM Memory IC

  • Density: 256Mbit (32M x 8)
  • Package Type: 66-TSOP (II) with lead-free packaging
  • Voltage: 2.5V ± 0.2V
  • Interface: SSTL_2

Applications of Samsung 256Mb J-die DDR SDRAM Memory IC

  • Consumer electronics
  • Computing systems
  • High-performance memory applications
  • Data processing units

Package Includes

  • 1 X Samsung 256Mb J-die DDR SDRAM Memory IC
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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