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K4H561638J-LCB3 ,256Mb, J-die DDR SDRAM, TSOP, 7.8us IC
- Stock: Out Of Stock
- SKU: 7096 | DAG977
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Rs. 259.60 (inc GST)
Rs.220.00 + GSTQty :
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Samsung 256Mb J-die DDR SDRAM Memory IC
K4H561638J-LCB3, 256Mb DDR SDRAM, 400Mb/s data rate, 66-TSOP package.
The Samsung 256Mb J-die DDR SDRAM Memory IC (K4H561638J-LCB3) is designed for high-performance applications. This memory IC operates at a data rate of 400Mb/s per pin, making it ideal for demanding memory systems. Its organization of 32M x 8 ensures efficient data handling, while the 2.5V voltage requirement provides stability across various applications.
Incorporating advanced CMOS technology, the Samsung 256Mb J-die DDR SDRAM Memory IC supports synchronous operations with data strobe features, enabling transactions on both edges of the DQS. This flexibility is crucial for high-speed operations in modern electronic devices, ensuring reliability and performance.
Applications for this memory IC range from consumer electronics to computing systems, where speed and efficiency are paramount. Explore the potential of the Samsung 256Mb J-die DDR SDRAM Memory IC for your project today.
Explore a wide range of quality Memory IC's from Samsung at DNA. Discover the best options for your electronic projects and ensure seamless performance. Check other Memory IC's that we have in stock.
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Features of Samsung 256Mb J-die DDR SDRAM Memory IC
- 256Mb density
- DDR-400 data rate
- 66-TSOP package
- Synchronous operation
- Bidirectional data strobe support
- Edge aligned data output
Specifications of Samsung 256Mb J-die DDR SDRAM Memory IC
- Density: 256Mbit (32M x 8)
- Package Type: 66-TSOP (II) with lead-free packaging
- Voltage: 2.5V ± 0.2V
- Interface: SSTL_2
Applications of Samsung 256Mb J-die DDR SDRAM Memory IC
- Consumer electronics
- Computing systems
- High-performance memory applications
- Data processing units
Package Includes
- 1 X Samsung 256Mb J-die DDR SDRAM Memory IC
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