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K4H561638J-LCB3 ,256Mb, J-die DDR SDRAM, TSOP, 7.8us IC
- Stock: Out Of Stock
- SKU: 7096 | DAG977
-
Rs. 259.60 (inc GST)
Rs.220.00 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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K4H561638J-LCB3 ,256Mb, J-die DDR SDRAM, TSOP ,7.8us IC
K4H561638J-LCB3 IC
The K4H560438J is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 / 4x 4,194,304 words by 4/8/16bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
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Features of K4H561638J-LCB3 IC
- All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
- Data I/O transactions on both edges of data strobe
- Edge aligned data output, center aligned data input;
- LDM,UDM for write masking only (x16)
- Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
- Edge aligned data output, center aligned data input
Specifications of K4H561638J-LCB3 IC
- Density: 256Mbit (32M x 8)
- Organization: 32M x 8
- Package Type: 66-TSOP (II) with lead-free packaging
- Data Rate: DDR-400 (400 Mb p s per pin)
- Voltage: 2.5V ± 0.2V
- Interface: SSTL_2
Package Includes
1 x K4H561638J-LCB3 IC, 256Mb, J-die DDR SDRAM, TSOP, 7.8us
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