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BD135 NPN Transistor

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Stock: 72
Availability: InStock priceValidUntil: 2026-02-28
SKU: 583 | DAA192

Rs. 8.26 (inc GST)
Rs.7.00 + GST

Qty :
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GST Invoice: Available for all purchases — eligible for input tax credit.

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Description

BD135 NPN Transistor

BD135 is the NPN transistor.

BD135 Transistor is use in Medium Power Linear and Switching Applications. BD135 Transistor is Complement to BD136, BD138 and BD140 respectively.

Features of BD135 NPN Transistor

V_CBO Collector-Base Voltage : BD135 45V
V_CEO Collector-Emitter Voltage : BD135 45V
V_EBO Emitter-Base Voltage 5 V
I_C Collector Current (DC) 1.5 A
I_CP Collector Current (Pulse) 3.0 A
I_B Base Current 0.5 A
P_C Collector Dissipation (T_C=25°C) 12.5 W
P_C Collector Dissipation (T_a=25°C) 1.25 W
T_J Junction Temperature 150 °C
T_STG Storage Temperature - 55 ~ 150 °C
V_CE(sat) Collector-Emitter Saturation Voltage I_C = 500mA, I_B = 50mA 0.5 V
V_BE(on) Base-Emitter ON Voltage V_CE = 2V, I_C= 0.5A 1 V

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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BD135 NPN Transistor

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BD135 NPN Transistor

BD135 Transistor is use in Medium Power Linear and Switching Applications. BD135 Transistor is Complement to BD136, BD138 and BD140 respectively.

Features of BD135 NPN Transistor

VCBO Collector-Base Voltage : BD135 45V

VCEO Collector-Emitter Voltage : BD135 45V

VEBO Emitter-Base Voltage 5 V

IC Collector Current (DC) 1.5 A

ICP Collector Current (Pulse) 3.0 A

IB Base Current 0.5 A

PC Collector Dissipation (TC=25°C) 12.5 W

PC Collector Dissipation (Ta=25°C) 1.25 W

TJ Junction Temperature 150 °C

TSTG Storage Temperature - 55 ~ 150 °C

VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 0.5 V

VBE(on) Base-Emitter ON Voltage VCE = 2V, IC = 0.5A 1 V

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V_CBO Collector-Base Voltage : BD135 45V

V_CEO Collector-Emitter Voltage : BD135 45V

V_EBO Emitter-Base Voltage 5 V

I_C Collector Current (DC) 1.5 A

I_CP Collector Current (Pulse) 3.0 A

I_B Base Current 0.5 A

P_C Collector Dissipation (T_C=25°C) 12.5 W

P_C Collector Dissipation (T_a=25°C) 1.25 W

T_J Junction Temperature 150 °C

T_STG Storage Temperature - 55 ~ 150 °C

V_CE(sat) Collector-Emitter Saturation Voltage I_C = 500mA, I_B = 50mA 0.5 V

V_BE(on) Base-Emitter ON Voltage V_CE = 2V, I_C= 0.5A 1 V