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BF494 NPN Transistors

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Stock: Out Of Stock
Availability: NotInStock priceValidUntil: 2026-09-05
SKU: 824 | DAA384

Rs. 4.72 (inc GST)
Rs.4.00 + GST

Qty :
Qty Qty

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

BF494 NPN Transistors

This is NPN medium Frequency Transistor. BF494 transistor is in TO-92 package.

Features of BF494

Low current (max. 30 mA)
Low voltage (max. 20 V)
V_CBO collector-base voltage open emitter : 30 V
V_CEO collector-emitter voltage open base : 20 V
I_CM peak collector current: 30 mA
P_tot total power dissipation T_amb ≤ 25 °C : 300 mW
h_FE DC current gain I_C = 1 mA; V_CE = 10V : (Min:67, Max:220)
F_T transition frequency I_C= 1 mA; V_CE = 10 V; f = 100 MHz : 120MHz

Applications of BF494

HF applications in radio and television receivers
FM tuners
Low noise AM mixer-oscillators
IF amplifiers in AM/FM receivers.

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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BF494 NPN Transistors

Qty :

BF494 NPN Transistors

This is NPN medium Frequency Transistor. BF494 transistor is in TO-92 package.

Features of BF494

Low current (max. 30 mA)

Low voltage (max. 20 V)

VCBO collector-base voltage open emitter : 30 V

VCEO collector-emitter voltage open base : 20 V

ICM peak collector current: 30 mA

Ptot total power dissipation Tamb ≤ 25 °C : 300 mW

hFE DC current gain IC = 1 mA; VCE = 10V : (Min:67, Max:220)

FT transition frequency IC = 1 mA; VCE = 10 V; f = 100 MHz : 120MHz

Applications of BF494

HF applications in radio and television receivers

FM tuners

Low noise AM mixer-oscillators

IF amplifiers in AM/FM receivers.

Write a review

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V_CBO collector-base voltage open emitter : 30 V

V_CEO collector-emitter voltage open base : 20 V

I_CM peak collector current: 30 mA

P_tot total power dissipation T_amb ≤ 25 °C : 300 mW

h_FE DC current gain I_C = 1 mA; V_CE = 10V : (Min:67, Max:220)

F_T transition frequency I_C= 1 mA; V_CE = 10 V; f = 100 MHz : 120MHz