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FDA59N30 N Channel MOSFET DIP
- Stock: 4
- SKU: 3304 | DAD338
-
Rs. 253.11 (inc GST)
Rs.214.50 + GSTQty :
| Also Available: DV164122 Microchip PICkit Serial Analyzer in Stock |
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Delivery: 2–8 days across India. No MOQ required.
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FDA59N30 N Channel MOSFET DIP for Power Applications
FDA59N30 N Channel MOSFET DIP, Low RDS(on) 47 mΩ, 100% Avalanche Tested for reliable performance.
The FDA59N30 N Channel MOSFET DIP is designed to enhance switching efficiency and minimize on-state resistance. This MOSFET excels in applications such as power factor correction (PFC) and AC-DC power supplies. Its low gate charge of 77 nC ensures quick switching, making it ideal for flat panel display (FPD) TVs and uninterruptible power supplies. The FDA59N30 also features an avalanche energy strength that guarantees robust performance under challenging conditions.
Engineered for high reliability, the FDA59N30 N Channel MOSFET DIP is a vital component in modern electronic designs. With a typical RDS(on) of 47 mΩ at VGS = 10 V and ID = 29.5 A, this device supports efficient energy management in various applications. Its low Crss of 80 pF further enhances its suitability for power electronics.
For Indian customers seeking dependable components, the FDA59N30 stands out in the MOSFET & IGBT category. Explore how this MOSFET can improve your electronic projects and ensure optimal performance in power converter applications.
Explore the reliability of MOSFET & IGBT components at DNA. The FDA59N30 N Channel MOSFET DIP is designed for efficiency in power applications. Check other "MOSFET & IGBT" that we have in stock.
If you require specific electronic components, reach out to us at DNA. We can help you find or import parts not currently in stock. We support both retail and bulk orders. Consider our selection of Connectors, Power Supply, LCD, DC to DC Converter Module, Humidity & Temperature Sensor, Analog IC. Contact Us
Features of FDA59N30 N Channel MOSFET DIP
- RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A
- Low Gate Charge (Typ. 77 nC)
- Low Crss (Typ. 80 pF)
- 100% Avalanche Tested
Specification of FDA59N30 N Channel MOSFET DIP
- RDS(on) = 47 mΩ
- VGS = 10 V
- ID = 29.5 A
- Gate Charge = 77 nC
- Crss = 80 pF
Applications of FDA59N30 N Channel MOSFET DIP
- Power Factor Correction
- Flat Panel Display TVs
- Uninterruptible Power Supply
- AC-DC Power Supply
Related Links for FDA59N30 N Channel MOSFET DIP for Power Applications
Package Includes
- 1 X FDA59N30 N Channel MOSFET DIP
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