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FDA59N30 N Channel MOSFET DIP

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Stock: 4
Availability: InStock priceValidUntil: 2026-12-09
SKU: 3304 | DAD338

Rs. 253.11 (inc GST)
Rs.214.50 + GST
Qty : Qty Qty

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

FDA59N30 N Channel MOSFET DIP for Power Applications

FDA59N30 N Channel MOSFET DIP, Low RDS(on) 47 mΩ, 100% Avalanche Tested for reliable performance.

The FDA59N30 N Channel MOSFET DIP is designed to enhance switching efficiency and minimize on-state resistance. This MOSFET excels in applications such as power factor correction (PFC) and AC-DC power supplies. Its low gate charge of 77 nC ensures quick switching, making it ideal for flat panel display (FPD) TVs and uninterruptible power supplies. The FDA59N30 also features an avalanche energy strength that guarantees robust performance under challenging conditions.

Engineered for high reliability, the FDA59N30 N Channel MOSFET DIP is a vital component in modern electronic designs. With a typical RDS(on) of 47 mΩ at VGS = 10 V and ID = 29.5 A, this device supports efficient energy management in various applications. Its low Crss of 80 pF further enhances its suitability for power electronics.

For Indian customers seeking dependable components, the FDA59N30 stands out in the MOSFET & IGBT category. Explore how this MOSFET can improve your electronic projects and ensure optimal performance in power converter applications.

Explore the reliability of MOSFET & IGBT components at DNA. The FDA59N30 N Channel MOSFET DIP is designed for efficiency in power applications. Check other "MOSFET & IGBT" that we have in stock.

If you require specific electronic components, reach out to us at DNA. We can help you find or import parts not currently in stock. We support both retail and bulk orders. Consider our selection of Connectors, Power Supply, LCD, DC to DC Converter Module, Humidity & Temperature Sensor, Analog IC. Contact Us

Features of FDA59N30 N Channel MOSFET DIP

RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A
Low Gate Charge (Typ. 77 nC)
Low Crss (Typ. 80 pF)
100% Avalanche Tested

Specification of FDA59N30 N Channel MOSFET DIP

RDS(on) = 47 mΩ
VGS = 10 V
ID = 29.5 A
Gate Charge = 77 nC
Crss = 80 pF

Applications of FDA59N30 N Channel MOSFET DIP

Power Factor Correction
Flat Panel Display TVs
Uninterruptible Power Supply
AC-DC Power Supply

Package Includes

1 X FDA59N30 N Channel MOSFET DIP

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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