onsemi FQD8P10TM-F085 P Channel MOSFET

FQD8P10TM-F085 P Channel MOSFET, Low Gate Charge 12 nC, Fast Switching, RoHS Compliant.

The onsemi FQD8P10TM-F085 P Channel MOSFET is designed for high-efficiency applications. It features low gate charge and fast switching capabilities, making it ideal for audio amplifiers and DC motor control. This transistor operates effectively within a temperature range of -55°C to +150°C. The _**FQD8P10TM-F085**_ is a robust choice for various power management solutions. Its improved dv/dt capability ensures reliability in demanding conditions.

This MOSFET minimizes on-state resistance through onsemi's advanced DMOS technology. Its 100% avalanche testing guarantees performance and safety. The _**onsemi FQD8P10TM-F085**_ is suitable for high-efficiency switching in DC/DC converters, contributing to energy savings in electronic designs. Explore how this component can enhance your projects.

For those looking to upgrade their electronic designs, the _**FQD8P10TM-F085 P Channel MOSFET**_ provides significant advantages. With its AEC-Q101 qualification and RoHS compliance, it meets industry standards for quality and performance. Consider integrating this MOSFET into your next design for optimal results.

Explore the capabilities of the onsemi brand in the MOSFET & IGBT category at DNA. Discover how the FQD8P10TM-F085 can meet your electronic component needs. Check other "MOSFET & IGBT" that we have in stock.

At DNA, we cater to all Indian electronics buyers. If you can't find specific parts, we can import them for you. We also support retail and bulk purchases. Don't forget to check out related items like Crystal, Development boards, SMPS, Sensor Module, DC to DC Converter IC, and Humidity & Temperature Sensor. Contact Us

Features of onsemi FQD8P10TM-F085 P Channel MOSFET

• Low Gate Charge: 12 nC
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• AEC-Q101 Qualified
• RoHS Compliant

Specification of onsemi FQD8P10TM-F085 P Channel MOSFET

• Package Type: DPAK (TO-252)
• Gate-Source Voltage: ±30 V
• Pulsed Drain Current: -26.4 A
• Operating Temperature Range: -55°C to +150°C
• Thermal Resistance Junction-to-Case: 2.84°C/W

Applications of onsemi FQD8P10TM-F085 P Channel MOSFET

• Audio Amplifiers
• High-Efficiency Switching DC/DC Converters
• DC Motor Control

Related Links for onsemi FQD8P10TM-F085 P Channel MOSFET

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X onsemi FQD8P10TM-F085 P Channel MOSFET