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IRF1405 N-Channel Power MOSFET

  • Stock: 1

    Availability: InStock priceValidUntil: 2026-12-07

  • SKU: 711 | DAA168

Availability: InStock priceValidUntil: 2026-12-07

  • Rs. 88.50 (inc GST)
    Rs.75.00 + GST
    Qty :

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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IRF1405 N Channel Power MOSFET 55V 169A

IRF1405 N Channel MOSFET, 55V, 169A, low on-resistance, fast switching.

The IRF1405 N Channel Power MOSFET delivers reliable performance with a 55 Volt rating and a continuous drain current of 169 Amperes. Designed in a TO220 package, it features low on-resistance and a maximum junction temperature of 175°C. This makes the IRF1405 suitable for various applications, including motor drives in industrial settings.
Engineered with advanced processing techniques, the IRF1405 N Channel Power MOSFET achieves excellent efficiency and fast switching capabilities. Its repetitive avalanche rating enhances reliability, making it ideal for demanding environments. This MOSFET is a solid choice for engineers looking for robust performance in power management.
Explore the potential of the IRF1405 in your applications. Its versatile design supports a range of uses in electronic circuits, ensuring optimal functionality in your projects. Choose the IRF1405 N Channel Power MOSFET for your next design and experience enhanced performance.
Discover the efficiency of MOSFET & IGBT from DNA. The IRF1405 N Channel Power MOSFET is a reliable choice for your electronic needs. Explore our extensive range of MOSFET & IGBT products. Check other "MOSFET & IGBT" that we have in stock.
Are you searching for specific electronic components? At DNA, we cater to Indian electronics buyers and can help you find what you need. We can import parts if they are not available and support retail as well as bulk orders. Check out our offerings like Hongfa Relay, MOSFET, Sensor Module, and more. Contact Us.

Features of IRF1405 N Channel Power MOSFET

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Fast Switching
  • 175°C Operating Temperature
  • Repetitive Avalanche Allowed up to Tjmax

Specification of IRF1405 N Channel Power MOSFET

  • ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 169 A
  • ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 118 A
  • IDM Pulsed Drain Current 668 A
  • PD @ TC = 25°C Power Dissipation 330 W
  • VGS Gate-to-Source Voltage 20 V
  • EAS Single Pulse Avalanche Energy 560 mJ

Applications of IRF1405 N Channel Power MOSFET

  • Industrial motor drive
  • Power management systems
  • Switching applications
  • High-frequency converters

Related Links for IRF1405 N Channel Power MOSFET 55V 169A

Package Includes

  • 1 X IRF1405 N Channel Power MOSFET
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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