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SI2308BDS-T1-GE3- N-Channel 60-V (D-S) SOT-23 MOSFET

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Stock: 600
Availability: InStock priceValidUntil: 2026-05-25
SKU: 3807 | DAG107

Rs. 19.47 (inc GST)
Rs.16.50 + GST

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GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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Description

SI2308BDS-T1-GE3 N-Channel 60V MOSFET for Switching Applications

SI2308BDS-T1-GE3 N-Channel MOSFET with low RDS(on) and 60V rating for efficient load switching.

The SI2308BDS-T1-GE3 N-Channel 60V MOSFET is designed for fast switching applications in moderate to high-power circuits. Its low RDS(on) values minimize conduction losses, enhancing system efficiency. The small SOT-23 package makes it ideal for space-constrained designs, especially in Indian electronic projects. This MOSFET excels in DC-DC converters and load switching, ensuring reliable performance in power systems.

Utilizing advanced trench FET technology, the SI2308BDS-T1-GE3 operates efficiently with reduced gate charge. The enhancement mode feature keeps it normally off, suitable for low standby power needs. Applications include battery management systems, motor drivers, and power supply units, making it a versatile choice for various electronic applications.

Explore the potential of the SI2308BDS-T1-GE3 N-Channel 60V MOSFET for your projects. Its fast switching speed and compact design cater to the demanding needs of modern electronics in India, from LED drivers to consumer electronics. Enhance your designs with this reliable component.

Discover the efficiency of MOSFET & IGBT at DNA. Explore the SI2308BDS-T1-GE3 and other products in the MOSFET & IGBT category. Check other "MOSFET & IGBT" that we have in stock.

Are you looking for specific electronic components? DNA can help. We can import parts and support you in retail or bulk orders. Check out our offerings like HMI Displays, DC to DC Converter Modules, Microcontrollers, and more. Contact Us.

Features of SI2308BDS-T1-GE3 N-Channel 60V MOSFET

High Voltage Tolerance
Low On-Resistance (Rds(on))
Fast Switching Speed
Compact SOT-23 Package
Advanced Trench FET Technology
Enhancement Mode

Specification of SI2308BDS-T1-GE3 N-Channel 60V MOSFET

Vds Rating: 60V
Rds(on): Low
Package Type: SOT-23
Switching Speed: Fast
Technology: Trench FET

Applications of SI2308BDS-T1-GE3 N-Channel 60V MOSFET

DC-DC Converters
Load Switching
Battery Management Systems
Motor Drivers
Power Supply Units
LED Drivers

Package Includes

1 X SI2308BDS-T1-GE3 N-Channel 60V MOSFET

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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