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  • STP80NF10 Power MOSFET

Product Images are shown for illustrative purposes only and may differ from actual product.

STP80NF10 Power MOSFET

  • Rs. 81.42 (inc GST)
    Rs.69.00 + GST

    Qty :

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.

STP80NF10 Power MOSFET

This Power MOSFET series realized with STMicro electronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is there fore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.


If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of STP80NF10 MOSFET 

  • Exceptional dv/dt capability
  • 100% Avalanche tested
  • Application oriented characterization
  • VDS Drain-source voltage (VGS = 0) 100V
  • VGS Gate- source voltage ±20V
  • ID Drain current (continuous) at TC = 25 °C 80A
  • ID Drain current (continuous) at TC = 100 °C 80A
  • IDM Drain current (pulsed) 320A
  • PTOT Total dissipation at TC = 25 °C 300W
  • Derating factor 2W/°C
  • dv/dt Peak diode recovery voltage slope 7V/ns
  • EAS Single pulse avalanche energy 350mJ
  • Tstg Storage temperature
  • Tj Operating junction temperature -55 to 175°C
  • Rthj-case Thermal resistance junction-case max 0.5°C/W
  • Rthj-amb Thermal resistance junction-ambient max 62.5°C/W
  • Tl Maximum lead temperature for soldering purpose 300°C

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Tags: Power MOSFET