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MJE13003D NPN Power Transistor

Write a review | 3 reviews

Stock: 43
Availability: InStock priceValidUntil: 2026-10-05
SKU: 563 | DAA143

Rs. 11.80 (inc GST)
Rs.10.00 + GST

Qty :
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GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

MJE13003D NPN POWER TRANSISTOR

MJE13003D is HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR.

The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.

FEATURES of MJE13003D NPN POWER TRANSISTOR

Fast-Switching And High Voltage Capability
Dynamic Parameters With Low Spread
High Reliability
Integrated Anti parallel Collector-Emitter Diode
Collector- Emitter Voltage (V_BE =0) V_CES=700 V
Collector-Emitter Voltage (I_B=0) V_CEO=400 V
Emitter-Base Voltage (I_C=0, I_B=0.75A, t_P<10μS) VEBO=9 V
Collector Current I_C=1.5 A
Collector Peak Current (t_P<5ms) I_CM=3 A
Emitter-Base Breakdown Voltage BV_EBO IE =10mA, I_C=0 is 9V(min), 18 V(max)
Base Current I_B=0.75 A
Base Peak Current (tP <5ms) IBM=1.5 A
Collector-Emitter Sustaining Voltage V_CEO _(SUS) I_C=10mA, I_B=0=400

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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MJE13003D NPN Power Transistor

Qty :

MJE13003D NPN POWER TRANSISTOR

The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.

FEATURES of MJE13003D NPN POWER TRANSISTOR

Fast-Switching And High Voltage Capability

Dynamic Parameters With Low Spread

High Reliability

Integrated Anti parallel Collector-Emitter Diode

Collector- Emitter Voltage (VBE =0) VCES=700 V

Collector-Emitter Voltage (I B =0) VCEO=400 V

Emitter-Base Voltage (IC=0, IB=0.75A, tP <10μS) VEBO=9 V

Collector Current IC=1.5 A

Collector Peak Current (tP <5ms) ICM=3 A

Emitter-Base Breakdown Voltage BVEBO IE =10mA, IC=0 is 9V(min), 18 V(max)

Base Current IB=0.75 A

Base Peak Current (tP <5ms) IBM=1.5 A

Collector-Emitter Sustaining Voltage VCEO (SUS) IC=10mA, IB=0=400

Write a review

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Collector- Emitter Voltage (V_BE =0) V_CES=700 V

Collector-Emitter Voltage (I_B=0) V_CEO=400 V

Emitter-Base Voltage (I_C=0, I_B=0.75A, t_P<10μS) VEBO=9 V

Collector Current I_C=1.5 A

Collector Peak Current (t_P<5ms) I_CM=3 A

Emitter-Base Breakdown Voltage BV_EBO IE =10mA, I_C=0 is 9V(min), 18 V(max)

Base Current I_B=0.75 A

Collector-Emitter Sustaining Voltage V_CEO _(SUS) I_C=10mA, I_B=0=400