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TIP41 NPN Transistor

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Stock: 94
Availability: InStock priceValidUntil: 2026-08-01
SKU: 578 | DAA207

Rs. 23.60 (inc GST)
Rs.20.00 + GST

Qty :
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GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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Import Service: We import a wide range of electronic components on request.

Description

TIP41 NPN Transistor

TIP41 transistor is used in Medium Power Linear Switching. TIP41 is Complement to TIP42/42A/42B/42C.

Features of TIP41 Transistor

V_CBO Collector-Base Voltage =40V
V_CEO Collector-Emitter Voltage =40V
V_EBO Emitter-Base Voltage 5 V
I_C Collector Current (DC) 6 A
I_CP Collector Current (Pulse) 10 A
I_B Base Current 2 A
P_C Collector Dissipation (TC=25°C) 65 W
P_C Collector Dissipation (Ta=25°C) 2 W
T_J Junction Temperature 150 °C
T_STG Storage Temperature - 65 ~ 150 °C
V_CE(sat) Collector-Emitter Saturation Voltage (I_C = 6A, I_B = 600mA) 1.5 V
V_BE(sat) Base-Emitter Saturation Voltage (V_CE = 4V, I_C = 6A) 2.0 V
f_T Current Gain Bandwidth Product (V_CE = 10V, I_C = 500mA) 3.0 MH

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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TIP41 NPN Transistor

Qty :

TIP41 NPN Transistor

Features of TIP41 Transistor

VCBO Collector-Base Voltage =40V

VCEO Collector-Emitter Voltage =40V

VEBO Emitter-Base Voltage 5 V

IC Collector Current (DC) 6 A

ICP Collector Current (Pulse) 10 A

IB Base Current 2 A

PC Collector Dissipation (TC=25°C) 65 W

PC Collector Dissipation (Ta=25°C) 2 W

TJ Junction Temperature 150 °C

TSTG Storage Temperature - 65 ~ 150 °C

VCE(sat) Collector-Emitter Saturation Voltage (IC = 6A, IB = 600mA) 1.5 V

VBE(sat) Base-Emitter Saturation Voltage (VCE = 4V, IC = 6A) 2.0 V

fT Current Gain Bandwidth Product (VCE = 10V, IC = 500mA) 3.0 MH

Write a review

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V_CBO Collector-Base Voltage =40V

V_CEO Collector-Emitter Voltage =40V

V_EBO Emitter-Base Voltage 5 V

I_C Collector Current (DC) 6 A

I_CP Collector Current (Pulse) 10 A

I_B Base Current 2 A

P_C Collector Dissipation (TC=25°C) 65 W

P_C Collector Dissipation (Ta=25°C) 2 W

T_J Junction Temperature 150 °C

T_STG Storage Temperature - 65 ~ 150 °C

V_CE(sat) Collector-Emitter Saturation Voltage (I_C = 6A, I_B = 600mA) 1.5 V

V_BE(sat) Base-Emitter Saturation Voltage (V_CE = 4V, I_C = 6A) 2.0 V

f_T Current Gain Bandwidth Product (V_CE = 10V, I_C = 500mA) 3.0 MH