STP80NF10 Power MOSFET

This Power MOSFET series realized with STMicro electronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is there fore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.

Features of STP80NF10 MOSFET 

• Exceptional dv/dt capability

• 100% Avalanche tested

• Application oriented characterization

• VDS Drain-source voltage (VGS = 0) 100V

• VGS Gate- source voltage ±20V

• ID Drain current (continuous) at TC = 25 °C 80A

• ID Drain current (continuous) at TC = 100 °C 80A

• IDM Drain current (pulsed) 320A

• PTOT Total dissipation at TC = 25 °C 300W

• Derating factor 2W/°C

• dv/dt Peak diode recovery voltage slope 7V/ns

• EAS Single pulse avalanche energy 350mJ

• Tstg Storage temperature

• Tj Operating junction temperature -55 to 175°C

• Rthj-case Thermal resistance junction-case max 0.5°C/W

• Rthj-amb Thermal resistance junction-ambient max 62.5°C/W

• Tl Maximum lead temperature for soldering purpose 300°C