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IKW75N60T High Speed Switching IGBT


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  • Stock: 3

    Availability: InStock priceValidUntil: 2026-07-14

  • SKU: 8143 | DAH643

Availability: InStock priceValidUntil: 2026-07-14

  • Rs. 568.26 (inc GST)
    Rs.481.58 + GST

    Qty :

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IKW75N60T High Speed Switching IGBT

IKW75N60T IGBT for high speed switching, 600V, 75A, optimized for efficiency.

The IKW75N60T High Speed Switching IGBT is engineered for high efficiency and fast switching speeds. Utilizing Trenchstop™ and Fieldstop™ technology, this IGBT minimizes conduction and switching losses, making it ideal for various power conversion applications. It supports high-frequency operation, ensuring optimal performance in inverters, welding machines, and industrial motor drives. The robust design guarantees reliability in demanding environments.

With a collector-emitter voltage of 600V and continuous collector current of 75A, the IKW75N60T stands out in applications requiring high power outputs. Its maximum power dissipation of 270W and a wide temperature range of -40°C to +175°C ensure operational stability. Ideal for home appliances and power supplies, this IGBT combines durability with efficiency.

Explore the benefits of the IKW75N60T High Speed Switching IGBT for your electronic projects. This component offers a perfect blend of performance and reliability, making it a go-to choice for engineers and hobbyists alike.

Discover the precision of Infineon in the MOSFET & IGBT category at DNA. Our selection of high-quality IGBTs ensures you find the right component for your needs. Check other "MOSFET & IGBT" that we have in stock.

If you are searching for specific electronic components, reach out to DNA. We support retail and bulk orders and can import parts if they are unavailable. Explore related items like Nextion Displays, Power Supplies, Analog ICs, and more. Contact Us.

Features of IKW75N60T High Speed Switching IGBT

  • High-Speed Switching
  • Low Switching Losses
  • Trenchstop™ Technology
  • Fieldstop™ Technology
  • Robust Design
  • High Current Capability

Specification of IKW75N60T High Speed Switching IGBT

  • Collector-Emitter Voltage: 600 V
  • Continuous Collector Current: 75 A
  • Gate-Emitter Threshold Voltage: 4.5 V to 6.5 V
  • Maximum Power Dissipation: 270 W
  • Temperature Range: -40°C to +175°C

Applications of IKW75N60T High Speed Switching IGBT

  • Inverters
  • Welding Machines
  • Industrial Motor Drives
  • Home Appliances
  • Power Supplies

Related Links for IKW75N60T High Speed Switching IGBT

Package Includes

  • 1 X IKW75N60T High Speed Switching IGBT
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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