IKW75N60T High Speed Switching IGBT

IKW75N60T High Speed Switching IGBT

The IKW75N60T is a high-speed switching Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. It is designed for applications requiring high efficiency and fast switching speeds. With its Trenchstop™ and Fieldstop™ technology, the IGBT provides low conduction and switching losses, making it suitable for a wide range of power conversion systems.

DNA solutions, Nashik has various types of IGBTs. Check out our complete collection of IGBT's.

• High-Speed Switching: Optimized for applications requiring high-frequency operation

• Low Switching Losses: Ensures better energy efficiency in power electronics

• Trenchstop™ Technology: Reduces conduction losses and improves overall performance

• Fieldstop™ Technology: Enhances ruggedness and minimizes tail current

• Robust Design: High reliability and robustness for industrial applications

• High Current Capability: Supports high power outputs without significant thermal issues

Specifications of IKW75N60T High Speed Switching IGBT

• Collector-Emitter Voltage: 600 V

• Continuous Collector Current: 75 A (at 25°C)

• Gate-Emitter Threshold Voltage: 4.5 V to 6.5 V

• Maximum Power Dissipation: 270 W (at 25°C)

• Switching Frequency: Optimized for high-frequency operation

• Temperature Range: -40°C to +175°C

• Package Type: TO-247

Applications of IKW75N60T High Speed Switching IGBT

• Inverters

• Welding Machines

• Industrial Motor Drives

• Home Appliances

• Power Supplies

• Home Appliances

Package Includes

      1 x IKW75N60T High Speed Switching IGBT