IRF1407 Automotive MOSFET

IRF1407 is specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

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Features of IRF1407 Automotive MOSFET

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Repetitive Avalanche Allowed up to Tjmax

• Gate-to-Source Voltage(VGS) ± 20 V

• Single Pulse Avalanche Energy(EAS) 390 mJ

• Operating Junction(TJ) and Storage Temperature(TSTG) Range -55 to + 175

Applications of IRF1407 Automotive MOSFET

• Integrated Starter Alternator

• 42 Volts Automotive Electrical Systems