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MJE3055 Power Transistor

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Stock: 11
Availability: InStock priceValidUntil: 2026-09-04
SKU: 285 | DAA145

Rs. 21.24 (inc GST)
Rs.18.00 + GST

Qty :
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GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

MJE3055 Power Transistor

The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package.

It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

Features of MJE3055 Transistor

V_CEO Collector-Emitter Voltage (I_B=0): 60 V
V_CBO Collector-Base Voltage (I_E=0): 70 V
V_EBO Emitter-Base Voltage (I_C=0): 5 V
I_CCollector Current: 10 A
I_BBase Current: 6 A
P_tot Total Power Dissipation at T_case: ≤ 25 oC 75 W
T_stg Storage Temperature: -55 to 150 oC
T_jMax. Operating Junction Temperature: 150 oC
R_thj-case Thermal Resistance Junction-case: Max 1.66 oC/W

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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MJE3055 Power Transistor

Qty :

MJE3055 Power Transistor

The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package.

It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

Features of MJE3055 Transistor

VCEO Collector-Emitter Voltage (IB=0): 60 V

VCBO Collector-Base Voltage (IE=0): 70 V

VEBO Emitter-Base Voltage (IC=0): 5 V

IC Collector Current: 10 A

IB Base Current: 6 A

Ptot Total Power Dissipation at Tcase: ≤ 25 oC 75 W

Tstg Storage Temperature: -55 to 150 oC

Tj Max. Operating Junction Temperature: 150 oC

Rthj-case Thermal Resistance Junction-case: Max 1.66 oC/W

Write a review

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V_CEO Collector-Emitter Voltage (I_B=0): 60 V

V_CBO Collector-Base Voltage (I_E=0): 70 V

V_EBO Emitter-Base Voltage (I_C=0): 5 V

I_CCollector Current: 10 A

I_BBase Current: 6 A

P_tot Total Power Dissipation at T_case: ≤ 25 oC 75 W

T_stg Storage Temperature: -55 to 150 oC

T_jMax. Operating Junction Temperature: 150 oC

R_thj-case Thermal Resistance Junction-case: Max 1.66 oC/W